Abstract
In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 322-324 |
| Number of pages | 3 |
| Volume | 61 |
| ISBN (Electronic) | 9781509049394 |
| DOIs | |
| Publication status | Published - 2018 Mar 8 |
| Event | 65th IEEE International Solid-State Circuits Conference, ISSCC 2018 - San Francisco, United States Duration: 2018 Feb 11 → 2018 Feb 15 |
Other
| Other | 65th IEEE International Solid-State Circuits Conference, ISSCC 2018 |
|---|---|
| Country | United States |
| City | San Francisco |
| Period | 18/2/11 → 18/2/15 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
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A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. / Choi, Woojun; Lee, Yong Tae; Kim, Seonhong; Lee, Sanghoon; Jang, Jieun; Chun, Junhyun; Makinwa, Kofi A.A.; Chae, Youngcheol.
2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Vol. 61 Institute of Electrical and Electronics Engineers Inc., 2018. p. 322-324.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
AU - Choi, Woojun
AU - Lee, Yong Tae
AU - Kim, Seonhong
AU - Lee, Sanghoon
AU - Jang, Jieun
AU - Chun, Junhyun
AU - Makinwa, Kofi A.A.
AU - Chae, Youngcheol
PY - 2018/3/8
Y1 - 2018/3/8
N2 - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
AB - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
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U2 - 10.1109/ISSCC.2018.8310314
DO - 10.1109/ISSCC.2018.8310314
M3 - Conference contribution
AN - SCOPUS:85046400393
VL - 61
SP - 322
EP - 324
BT - 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -