TY - GEN
T1 - A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS
AU - Choi, Woojun
AU - Lee, Yong Tae
AU - Kim, Seonhong
AU - Lee, Sanghoon
AU - Jang, Jieun
AU - Chun, Junhyun
AU - Makinwa, Kofi A.A.
AU - Chae, Youngcheol
PY - 2018/3/8
Y1 - 2018/3/8
N2 - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
AB - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
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U2 - 10.1109/ISSCC.2018.8310314
DO - 10.1109/ISSCC.2018.8310314
M3 - Conference contribution
AN - SCOPUS:85046400393
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 322
EP - 324
BT - 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 65th IEEE International Solid-State Circuits Conference, ISSCC 2018
Y2 - 11 February 2018 through 15 February 2018
ER -