In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power . Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).
|Title of host publication||2018 IEEE International Solid-State Circuits Conference, ISSCC 2018|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||3|
|Publication status||Published - 2018 Mar 8|
|Event||65th IEEE International Solid-State Circuits Conference, ISSCC 2018 - San Francisco, United States|
Duration: 2018 Feb 11 → 2018 Feb 15
|Name||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Other||65th IEEE International Solid-State Circuits Conference, ISSCC 2018|
|Period||18/2/11 → 18/2/15|
Bibliographical noteFunding Information:
This paper was the result of a research project supported by SK Hynix Inc. and it was also supported by NRF (National Research Foundation of Korea) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program).
© 2018 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering