A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

Woojun Choi; Yong Tae Lee; Seonhong Kim; Sanghoon Lee; Jieun Jang; Junhyun Chun; Kofi A.A. Makinwa; Youngcheol Chae

doi:10.1109/ISSCC.2018.8310314

A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

Woojun Choi, Yong Tae Lee, Seonhong Kim, Sanghoon Lee, Jieun Jang, Junhyun Chun, Kofi A.A. Makinwa, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

15 Citations (Scopus)

Abstract

In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm²).

Original language	English
Title of host publication	2018 IEEE International Solid-State Circuits Conference, ISSCC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	322-324
Number of pages	3
ISBN (Electronic)	9781509049394
DOIs	https://doi.org/10.1109/ISSCC.2018.8310314
Publication status	Published - 2018 Mar 8
Event	65th IEEE International Solid-State Circuits Conference, ISSCC 2018 - San Francisco, United States Duration: 2018 Feb 11 → 2018 Feb 15

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	61
ISSN (Print)	0193-6530

Other

Other	65th IEEE International Solid-State Circuits Conference, ISSCC 2018
Country/Territory	United States
City	San Francisco
Period	18/2/11 → 18/2/15

Bibliographical note

Funding Information:
This paper was the result of a research project supported by SK Hynix Inc. and it was also supported by NRF (National Research Foundation of Korea) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program).

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISSCC.2018.8310314

Cite this

Choi, W., Lee, Y. T., Kim, S., Lee, S., Jang, J., Chun, J., Makinwa, K. A. A., & Chae, Y. (2018). A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018 (pp. 322-324). (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 61). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2018.8310314

Choi, Woojun ; Lee, Yong Tae ; Kim, Seonhong ; Lee, Sanghoon ; Jang, Jieun ; Chun, Junhyun ; Makinwa, Kofi A.A. ; Chae, Youngcheol. / A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 322-324 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

@inproceedings{f175a12bef88414298fc6733bef29563,

title = "A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS",

abstract = "In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).",

author = "Woojun Choi and Lee, {Yong Tae} and Seonhong Kim and Sanghoon Lee and Jieun Jang and Junhyun Chun and Makinwa, {Kofi A.A.} and Youngcheol Chae",

note = "Funding Information: This paper was the result of a research project supported by SK Hynix Inc. and it was also supported by NRF (National Research Foundation of Korea) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program). Publisher Copyright: {\textcopyright} 2018 IEEE.; 65th IEEE International Solid-State Circuits Conference, ISSCC 2018 ; Conference date: 11-02-2018 Through 15-02-2018",

year = "2018",

month = mar,

day = "8",

doi = "10.1109/ISSCC.2018.8310314",

language = "English",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "322--324",

booktitle = "2018 IEEE International Solid-State Circuits Conference, ISSCC 2018",

address = "United States",

}

Choi, W, Lee, YT, Kim, S, Lee, S, Jang, J, Chun, J, Makinwa, KAA & Chae, Y 2018, A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. in 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 61, Institute of Electrical and Electronics Engineers Inc., pp. 322-324, 65th IEEE International Solid-State Circuits Conference, ISSCC 2018, San Francisco, United States, 18/2/11. https://doi.org/10.1109/ISSCC.2018.8310314

A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. / Choi, Woojun; Lee, Yong Tae; Kim, Seonhong; Lee, Sanghoon; Jang, Jieun; Chun, Junhyun; Makinwa, Kofi A.A.; Chae, Youngcheol.

2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 322-324 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 61).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A 0.53pJK2 7000μm2 resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS

AU - Choi, Woojun

AU - Lee, Yong Tae

AU - Kim, Seonhong

AU - Lee, Sanghoon

AU - Jang, Jieun

AU - Chun, Junhyun

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

N1 - Funding Information: This paper was the result of a research project supported by SK Hynix Inc. and it was also supported by NRF (National Research Foundation of Korea) Grant funded by the Korean Government (NRF-2016-Global Ph.D. Fellowship Program). Publisher Copyright: © 2018 IEEE.

PY - 2018/3/8

Y1 - 2018/3/8

N2 - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).

AB - In microprocessors and DRAMs, on-chip temperature sensors are essential components, ensuring reliability by monitoring thermal gradients and hot spots. Such sensors must be as small as possible, since multiple sensors are required for dense thermal monitoring. However, conventional BJT-based temperature sensors are not compatible with the sub-1V supply of advanced processes. Subthreshold MOSFETs can operate from lower supplies, but at high temperatures their performance is limited by leakage [1,2]. Thermal diffusivity (TD) sensors achieve sub-1V operation and small area with moderate accuracy, but require milliwatts of power [3]. Recently, resistor-based sensors based on RC WienBridge (WB) filters have realized high resolution and energy efficiency [4,5]. Fundamentally, they are robust to process and supply-voltage scaling. However, their readout circuitry has been based on continuous-time (CT) ΔΣ ADCs or frequency-locked loops (FLLs), which require precision analog circuits and occupy considerable area (>0.7mm2).

UR - http://www.scopus.com/inward/record.url?scp=85046400393&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046400393&partnerID=8YFLogxK

U2 - 10.1109/ISSCC.2018.8310314

DO - 10.1109/ISSCC.2018.8310314

M3 - Conference contribution

AN - SCOPUS:85046400393

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SP - 322

EP - 324

BT - 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 65th IEEE International Solid-State Circuits Conference, ISSCC 2018

Y2 - 11 February 2018 through 15 February 2018

ER -

Choi W, Lee YT, Kim S, Lee S, Jang J, Chun J et al. A 0.53pJK² 7000μm² resistor-based temperature sensor with an inaccuracy of ±0.35°C (3σ) in 65nm CMOS. In 2018 IEEE International Solid-State Circuits Conference, ISSCC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 322-324. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2018.8310314