A 0.7-dB NF, +8.2-dBm IIP3 CMOS low noise amplifier using frequency selective feedback

Tae Hwan Jin; Hong Gul Han; Tae Wook Kim

doi:10.1002/cta.2059

A 0.7-dB NF, +8.2-dBm IIP3 CMOS low noise amplifier using frequency selective feedback

Tae Hwan Jin, Hong Gul Han, Tae Wook Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

A CMOS amplifier employing the frequency selective feedback technique using a shunt feedback capacitor is designed and measured. The proposed amplifier can achieve a high IIP3 (input referred third-order intercept point) by reducing the third- and second-order nonlinearity contributions to the IMD3 (third-order intermodulation distortion), which is accomplished using a capacitor as the frequency selective element. Also, the shunt feedback capacitor improves the noise performance of the amplifier. By applying the technique to a cascode LNA using 0.18-μm CMOS technology, we obtain the NF of 0.7 dB, an IIP3 of +8.2 dBm, and a gain of 15.1 dB at 14.4 mW of power consumption at 900 MHz.

Original language	English
Pages (from-to)	21-37
Number of pages	17
Journal	International Journal of Circuit Theory and Applications
Volume	44
Issue number	1
DOIs	https://doi.org/10.1002/cta.2059
Publication status	Published - 2016 Jan 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government (MSIP) (2012R1A1A2044158).

Publisher Copyright:
© 2015 John Wiley & Sons, Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Computer Science Applications
Electrical and Electronic Engineering
Applied Mathematics

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10.1002/cta.2059

Cite this

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abstract = "A CMOS amplifier employing the frequency selective feedback technique using a shunt feedback capacitor is designed and measured. The proposed amplifier can achieve a high IIP3 (input referred third-order intercept point) by reducing the third- and second-order nonlinearity contributions to the IMD3 (third-order intermodulation distortion), which is accomplished using a capacitor as the frequency selective element. Also, the shunt feedback capacitor improves the noise performance of the amplifier. By applying the technique to a cascode LNA using 0.18-μm CMOS technology, we obtain the NF of 0.7 dB, an IIP3 of +8.2 dBm, and a gain of 15.1 dB at 14.4 mW of power consumption at 900 MHz.",

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N2 - A CMOS amplifier employing the frequency selective feedback technique using a shunt feedback capacitor is designed and measured. The proposed amplifier can achieve a high IIP3 (input referred third-order intercept point) by reducing the third- and second-order nonlinearity contributions to the IMD3 (third-order intermodulation distortion), which is accomplished using a capacitor as the frequency selective element. Also, the shunt feedback capacitor improves the noise performance of the amplifier. By applying the technique to a cascode LNA using 0.18-μm CMOS technology, we obtain the NF of 0.7 dB, an IIP3 of +8.2 dBm, and a gain of 15.1 dB at 14.4 mW of power consumption at 900 MHz.

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A 0.7-dB NF, +8.2-dBm IIP3 CMOS low noise amplifier using frequency selective feedback

Abstract

Bibliographical note

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