A 0.75V CMOS image sensor using time-based readout circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Circuits
Pages178-179
Number of pages2
Publication statusPublished - 2009 Nov 18
Event2009 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2009 Symposium on VLSI Circuits
CountryJapan
CityKyoto
Period09/6/1609/6/18

Fingerprint

Image sensors
Pixels
Networks (circuits)
Electric potential
Oxides
Transistors
Electric power utilization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Cho, K., Lee, D., Lee, J., & Han, G. (2009). A 0.75V CMOS image sensor using time-based readout circuit. In 2009 Symposium on VLSI Circuits (pp. 178-179). [5205395] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).
Cho, Kunhee ; Lee, Dongmyung ; Lee, Jeonghwan ; Han, Gunhee. / A 0.75V CMOS image sensor using time-based readout circuit. 2009 Symposium on VLSI Circuits. 2009. pp. 178-179 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).
@inproceedings{1130cb72c50c4cad8b28309198ca7cc6,
title = "A 0.75V CMOS image sensor using time-based readout circuit",
abstract = "This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38{\%} in 3.4-μm pixel pitch.",
author = "Kunhee Cho and Dongmyung Lee and Jeonghwan Lee and Gunhee Han",
year = "2009",
month = "11",
day = "18",
language = "English",
isbn = "9784863480018",
series = "IEEE Symposium on VLSI Circuits, Digest of Technical Papers",
pages = "178--179",
booktitle = "2009 Symposium on VLSI Circuits",

}

Cho, K, Lee, D, Lee, J & Han, G 2009, A 0.75V CMOS image sensor using time-based readout circuit. in 2009 Symposium on VLSI Circuits., 5205395, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, pp. 178-179, 2009 Symposium on VLSI Circuits, Kyoto, Japan, 09/6/16.

A 0.75V CMOS image sensor using time-based readout circuit. / Cho, Kunhee; Lee, Dongmyung; Lee, Jeonghwan; Han, Gunhee.

2009 Symposium on VLSI Circuits. 2009. p. 178-179 5205395 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A 0.75V CMOS image sensor using time-based readout circuit

AU - Cho, Kunhee

AU - Lee, Dongmyung

AU - Lee, Jeonghwan

AU - Han, Gunhee

PY - 2009/11/18

Y1 - 2009/11/18

N2 - This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

AB - This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

UR - http://www.scopus.com/inward/record.url?scp=70449396723&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70449396723&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:70449396723

SN - 9784863480018

T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers

SP - 178

EP - 179

BT - 2009 Symposium on VLSI Circuits

ER -

Cho K, Lee D, Lee J, Han G. A 0.75V CMOS image sensor using time-based readout circuit. In 2009 Symposium on VLSI Circuits. 2009. p. 178-179. 5205395. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).