A 0.75V CMOS image sensor using time-based readout circuit

Kunhee Cho, Dongmyung Lee, Jeonghwan Lee, Gunhee Han

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper proposes a low-voltage CMOS image sensor (CIS) using time-based readout (TBR) circuit. This TBR circuit reads out the moment of event from pixel instead of the voltage signal. This allows the use of low supply voltage in pixel with sufficient signal range. The prototype chip was fabricated with a 0.13-μm standard CMOS process and whole circuit uses thin-oxide gate transistors only. The measurement results show 54.2-dB dynamic range and 1.6- μW pixel power consumption in 0.75-V supply voltage. The fill factor is 38% in 3.4-μm pixel pitch.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Circuits
Pages178-179
Number of pages2
Publication statusPublished - 2009 Nov 18
Event2009 Symposium on VLSI Circuits - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2009 Symposium on VLSI Circuits
CountryJapan
CityKyoto
Period09/6/1609/6/18

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Cho, K., Lee, D., Lee, J., & Han, G. (2009). A 0.75V CMOS image sensor using time-based readout circuit. In 2009 Symposium on VLSI Circuits (pp. 178-179). [5205395] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).