A 0.7e-rms-temporal-readout-noise CMOS image sensor for low-light-level imaging

Yue Chen, Yang Xu, Youngcheol Chae, Adri Mierop, Xinyang Wang, Albert Theuwissen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

56 Citations (Scopus)


For low-light-level imaging, the performance of a CMOS image sensor (CIS) is usually limited by the temporal readout noise (TRN) generated from its analog readout circuit chain. Although a sub-electron TRN level can be achieved with a high-gain pixel-level amplifier, the pixel uniformity is highly impaired up to a few percent by its open-loop amplifier structure [1]. The TRN can be suppressed without this penalty by employing either a high-gain column-level amplifier [2] or a correlated multiple sampling (CMS) technique [3-5]. However, only 1-to-2 electron TRN level has been reported with the individual use of these approaches [2-5], and the low-frequency noise of the in-pixel source follower i.e. 1/fand RTS noise is a further limitation. Therefore, by implementing a high-gain column-level amplifier and CMS technique together with an in-pixel buried-channel source follower (BSF) [6], the TRN level can be reduced even further.

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Number of pages2
Publication statusPublished - 2012
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 2012 Feb 192012 Feb 23

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
ISSN (Print)0193-6530


Other59th International Solid-State Circuits Conference, ISSCC 2012
Country/TerritoryUnited States
CitySan Francisco, CA

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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