A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C

Kamran Souri; Youngcheol Chae; Frank Thus; Kofi Makinwa

doi:10.1109/ISSCC.2014.6757409

A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C

Kamran Souri, Youngcheol Chae, Frank Thus, Kofi Makinwa

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

51 Citations (Scopus)

Abstract

This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2^nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.

Original language	English
Title of host publication	2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	222-223
Number of pages	2
Volume	57
ISBN (Print)	9781479909186
DOIs	https://doi.org/10.1109/ISSCC.2014.6757409
Publication status	Published - 2014 Jan 1
Event	2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 - San Francisco, CA, United States Duration: 2014 Feb 9 → 2014 Feb 13

Other

Other	2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014
Country	United States
City	San Francisco, CA
Period	14/2/9 → 14/2/13

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Souri, K., Chae, Y., Thus, F., & Makinwa, K. (2014). A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. In 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers (Vol. 57, pp. 222-223). [6757409] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2014.6757409

@inproceedings{b6645ee56ab44c73ab1e68a03f347c83,

title = "A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C",

abstract = "This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.",

author = "Kamran Souri and Youngcheol Chae and Frank Thus and Kofi Makinwa",

year = "2014",

month = jan

day = "1",

doi = "10.1109/ISSCC.2014.6757409",

language = "English",

isbn = "9781479909186",

volume = "57",

pages = "222--223",

booktitle = "2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 ; Conference date: 09-02-2014 Through 13-02-2014",

}

Souri, K, Chae, Y, Thus, F & Makinwa, K 2014, A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. in 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers. vol. 57, 6757409, Institute of Electrical and Electronics Engineers Inc., pp. 222-223, 2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014, San Francisco, CA, United States, 14/2/9. https://doi.org/10.1109/ISSCC.2014.6757409

A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. / Souri, Kamran; Chae, Youngcheol; Thus, Frank; Makinwa, Kofi.

2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers. Vol. 57 Institute of Electrical and Electronics Engineers Inc., 2014. p. 222-223 6757409.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C

AU - Souri, Kamran

AU - Chae, Youngcheol

AU - Thus, Frank

AU - Makinwa, Kofi

PY - 2014/1/1

Y1 - 2014/1/1

N2 - This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.

AB - This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.

UR - http://www.scopus.com/inward/record.url?scp=84898060677&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84898060677&partnerID=8YFLogxK

U2 - 10.1109/ISSCC.2014.6757409

DO - 10.1109/ISSCC.2014.6757409

M3 - Conference contribution

AN - SCOPUS:84898060677

SN - 9781479909186

VL - 57

SP - 222

EP - 223

BT - 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014

Y2 - 9 February 2014 through 13 February 2014

ER -

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10.1109/ISSCC.2014.6757409