A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C

Kamran Souri; Youngcheol Chae; Frank Thus; Kofi Makinwa

doi:10.1109/ISSCC.2014.6757409

A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C

Kamran Souri, Youngcheol Chae, Frank Thus, Kofi Makinwa

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

72 Citations (Scopus)

Abstract

This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2^nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.

Original language	English
Title of host publication	2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	222-223
Number of pages	2
ISBN (Print)	9781479909186
DOIs	https://doi.org/10.1109/ISSCC.2014.6757409
Publication status	Published - 2014
Event	2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014 - San Francisco, CA, United States Duration: 2014 Feb 9 → 2014 Feb 13

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	57
ISSN (Print)	0193-6530

Other

Other	2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014
Country/Territory	United States
City	San Francisco, CA
Period	14/2/9 → 14/2/13

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISSCC.2014.6757409

Cite this

Souri, K., Chae, Y., Thus, F., & Makinwa, K. (2014). A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. In 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers (pp. 222-223). [6757409] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 57). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2014.6757409

Souri, Kamran ; Chae, Youngcheol ; Thus, Frank ; Makinwa, Kofi. / A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 222-223 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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abstract = "This paper describes an all-CMOS temperature sensor intended for RFID applications that achieves both sub-1V operation and high accuracy (±0.4°C) over a wide temperature range (-40 to 125°C). It is also an ultra-low-power design: drawing 700nA from a 0.85V supply. This is achieved by the use of dynamic threshold MOSTs (DTMOSTs) as temperature-sensing devices, which are then read out by an inverter-based 2nd-order zoom ADC. Circuit errors are mitigated by the use of dynamic error-correction techniques, while DTMOST spread is reduced by a single room temperature (RT) trim. The latter feature constitutes a significant advance over previous all-CMOS designs [5,6], which require two-point trimming to approach the same level of accuracy.",

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Souri, K, Chae, Y, Thus, F & Makinwa, K 2014, A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. in 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers., 6757409, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 57, Institute of Electrical and Electronics Engineers Inc., pp. 222-223, 2014 61st IEEE International Solid-State Circuits Conference, ISSCC 2014, San Francisco, CA, United States, 14/2/9. https://doi.org/10.1109/ISSCC.2014.6757409

A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. / Souri, Kamran; Chae, Youngcheol; Thus, Frank; Makinwa, Kofi.

2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2014. p. 222-223 6757409 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 57).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Souri K, Chae Y, Thus F, Makinwa K. A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C. In 2014 IEEE International Solid-State Circuits Conference, ISSCC 2014 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2014. p. 222-223. 6757409. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2014.6757409

A 0.85V 600nW all-CMOS temperature sensor with an inaccuracy of ±0.4°C (3s) from -40 to 125°C

Abstract

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