A 1 Gbit synchronous dynamic random access memory with an independent subarray-controlled scheme and a hierarchical decoding scheme

Kyuchan Lee, Changhyun Kim, Hongil Yoon, Keum Yong Kim, Byung Sik Moon, Sang Bo Lee, Jung Hwa Lee, Nam Jong Kim, Soo In Cho

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A prototype 1 Gbit synchronous DRAM with independent subarray-controlled isolation and hierarchical decoding schemes is demonstrated to alleviate the difficulties encountered in high-density devices with regard to failure analysis and performance optimization. The scheme to isolate memory arrays from "hard" defects and to overcome the dc leakages of "soft" defects with external sources allows monitoring of the leakage current for the defect analysis and testing of the device without being limited by the capabilities of on-chip voltage sources. A hierarchical decoding scheme with a dynamic CMOS series logic predecoder achieves improvements in circuit speed, power, and complexity. As a result, evaluation of the prototype devices can be facilitated, and the optimized circuit schemes achieve enhanced circuit performance. A fully working 1 Gbit synchronous DRAM with a chip size of 570 mm 2 was fabricated using a 0.16 μm CMOS process and tested for excellent functionality up to 143 MHz.

Original languageEnglish
Pages (from-to)779-785
Number of pages7
JournalIEEE Journal of Solid-State Circuits
Volume33
Issue number5
DOIs
Publication statusPublished - 1998 May

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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