A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique

Taeksang Song, Euisik Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

In this paper, we present a 1 V 5.2 GHz VCO using voltage-dividing and bias-level shifting technique to prevent loaded Q-factor degradation and increase oscillation amplitude. The proposed VCO achieves a phase noise of - 115.5 dBc/Hz at 1 MHz offset from a 5.2 GHz carrier frequency with 3 mA bias current from 1.0 V power supply. Tuning range is 450 MHz by changing the control bias from 0 V to 1.0 V.

Original languageEnglish
Title of host publication2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Subtitle of host publicationDigest of Papers
EditorsJ.D. Cressler, J. Papapolymerou
Pages87-90
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers - Atlanta, GA, United States
Duration: 2004 Sep 82004 Sep 10

Publication series

Name2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers

Conference

Conference2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers
CountryUnited States
CityAtlanta, GA
Period04/9/804/9/10

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Song, T., & Yoon, E. (2004). A 1-V 5 GHz low phase noise LC-VCO using voltage-dividing and bias-level shifting technique. In J. D. Cressler, & J. Papapolymerou (Eds.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers (pp. 87-90). (2004 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of Papers).