A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

Zhichao Tan, Youngcheol Chae, Roel Daamen, Aurélie Humbert, Youri V. Ponomarev, Michiel A.P. Pertijs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

A CMOS fully-integrated humidity sensor for a RFID sensor platform has been realized in 0.16μm CMOS technology. It consists of a top-metal finger capacitor, covered by a humidity-sensitive polyimide layer, and an energy-efficient inverter-based capacitance-to-digital converter (CDC). Measurements show that the CDC performs a 12.5-bit conversion in 0.8ms while consuming only 8.6μA from a 1.2V supply. Together with the co-integrated humidity sensor, this translates into a resolution of 0.05% RH in the range of 30% RH to 90% RH, at an energy consumption of only 8.3nJ per measurement.

Original languageEnglish
Title of host publication2012 Symposium on VLSI Circuits, VLSIC 2012
Pages24-25
Number of pages2
DOIs
Publication statusPublished - 2012 Sep 28
Event2012 Symposium on VLSI Circuits, VLSIC 2012 - Honolulu, HI, United States
Duration: 2012 Jun 132012 Jun 15

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2012 Symposium on VLSI Circuits, VLSIC 2012
CountryUnited States
CityHonolulu, HI
Period12/6/1312/6/15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tan, Z., Chae, Y., Daamen, R., Humbert, A., Ponomarev, Y. V., & Pertijs, M. A. P. (2012). A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications. In 2012 Symposium on VLSI Circuits, VLSIC 2012 (pp. 24-25). [6243771] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). https://doi.org/10.1109/VLSIC.2012.6243771