A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

Jae Yoon Sim, Hongil Yoon, Ki Chul Chun, Hyun Seok Lee, Sang Pyo Hong, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo, Soo In Cho

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μ technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5 °C.

Original languageEnglish
Pages (from-to)631-640
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume38
Issue number4
DOIs
Publication statusPublished - 2003 Apr 1

Fingerprint

Dynamic random access storage
Temperature sensors
Tuning
Pumps
Capacitors
Productivity
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Sim, Jae Yoon ; Yoon, Hongil ; Chun, Ki Chul ; Lee, Hyun Seok ; Hong, Sang Pyo ; Lee, Kyu Chan ; Yoo, Jei Hwan ; Seo, Dong Il ; Cho, Soo In. / A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor. In: IEEE Journal of Solid-State Circuits. 2003 ; Vol. 38, No. 4. pp. 631-640.
@article{d0e2f8d1bfab4bf7a29fd9c08ea647a4,
title = "A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor",
abstract = "To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μ technology. To achieve an ideal 33{\%} efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5 °C.",
author = "Sim, {Jae Yoon} and Hongil Yoon and Chun, {Ki Chul} and Lee, {Hyun Seok} and Hong, {Sang Pyo} and Lee, {Kyu Chan} and Yoo, {Jei Hwan} and Seo, {Dong Il} and Cho, {Soo In}",
year = "2003",
month = "4",
day = "1",
doi = "10.1109/JSSC.2003.809514",
language = "English",
volume = "38",
pages = "631--640",
journal = "IEEE Journal of Solid-State Circuits",
issn = "0018-9200",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor. / Sim, Jae Yoon; Yoon, Hongil; Chun, Ki Chul; Lee, Hyun Seok; Hong, Sang Pyo; Lee, Kyu Chan; Yoo, Jei Hwan; Seo, Dong Il; Cho, Soo In.

In: IEEE Journal of Solid-State Circuits, Vol. 38, No. 4, 01.04.2003, p. 631-640.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

AU - Sim, Jae Yoon

AU - Yoon, Hongil

AU - Chun, Ki Chul

AU - Lee, Hyun Seok

AU - Hong, Sang Pyo

AU - Lee, Kyu Chan

AU - Yoo, Jei Hwan

AU - Seo, Dong Il

AU - Cho, Soo In

PY - 2003/4/1

Y1 - 2003/4/1

N2 - To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μ technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5 °C.

AB - To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μ technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5 °C.

UR - http://www.scopus.com/inward/record.url?scp=0344089098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0344089098&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2003.809514

DO - 10.1109/JSSC.2003.809514

M3 - Article

VL - 38

SP - 631

EP - 640

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 4

ER -