A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

Jae Yoon Sim, Hongil Yoon, Ki Chul Chun, Hyun Seok Lee, Sang Pyo Hong, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo, Soo In Cho

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μ technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5 °C.

Original languageEnglish
Pages (from-to)631-640
Number of pages10
JournalIEEE Journal of Solid-State Circuits
Volume38
Issue number4
DOIs
Publication statusPublished - 2003 Apr

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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