A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Ki Chul Chun, Jae Yoon Sim, Hongil Yoon, Hyun Seok Lee, Sang Pyo Hong, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo

Research output: Contribution to journalArticle

Abstract

A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

Original languageEnglish
Pages (from-to)25-29
Number of pages5
JournalCurrent Applied Physics
Volume4
Issue number1
DOIs
Publication statusPublished - 2004 Feb 1

Fingerprint

Dynamic random access storage
low voltage
pumping
amplifiers
Electric potential
CMOS
electric potential
electric batteries
margins
electronics
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Chun, Ki Chul ; Sim, Jae Yoon ; Yoon, Hongil ; Lee, Hyun Seok ; Hong, Sang Pyo ; Lee, Kyu Chan ; Yoo, Jei Hwan ; Seo, Dong Il. / A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier. In: Current Applied Physics. 2004 ; Vol. 4, No. 1. pp. 25-29.
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A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier. / Chun, Ki Chul; Sim, Jae Yoon; Yoon, Hongil; Lee, Hyun Seok; Hong, Sang Pyo; Lee, Kyu Chan; Yoo, Jei Hwan; Seo, Dong Il.

In: Current Applied Physics, Vol. 4, No. 1, 01.02.2004, p. 25-29.

Research output: Contribution to journalArticle

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AB - A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

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