A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

Ki Chul Chun, Jae Yoon Sim, Hong Il Yoon, Hyun Seok Lee, Sang Pyo Hong, Kyu Chan Lee, Jei Hwan Yoo, Dong Il Seo

Research output: Contribution to journalArticle

Abstract

A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

Original languageEnglish
Pages (from-to)25-29
Number of pages5
JournalCurrent Applied Physics
Volume4
Issue number1
DOIs
Publication statusPublished - 2004 Feb 1

Fingerprint

Dynamic random access storage
low voltage
pumping
amplifiers
Electric potential
CMOS
electric potential
electric batteries
margins
electronics
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Chun, Ki Chul ; Sim, Jae Yoon ; Yoon, Hong Il ; Lee, Hyun Seok ; Hong, Sang Pyo ; Lee, Kyu Chan ; Yoo, Jei Hwan ; Seo, Dong Il. / A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier. In: Current Applied Physics. 2004 ; Vol. 4, No. 1. pp. 25-29.
@article{1eb7a80341bd43118527c084b9c036a1,
title = "A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier",
abstract = "A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.",
author = "Chun, {Ki Chul} and Sim, {Jae Yoon} and Yoon, {Hong Il} and Lee, {Hyun Seok} and Hong, {Sang Pyo} and Lee, {Kyu Chan} and Yoo, {Jei Hwan} and Seo, {Dong Il}",
year = "2004",
month = "2",
day = "1",
doi = "10.1016/j.cap.2003.09.008",
language = "English",
volume = "4",
pages = "25--29",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "1",

}

A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier. / Chun, Ki Chul; Sim, Jae Yoon; Yoon, Hong Il; Lee, Hyun Seok; Hong, Sang Pyo; Lee, Kyu Chan; Yoo, Jei Hwan; Seo, Dong Il.

In: Current Applied Physics, Vol. 4, No. 1, 01.02.2004, p. 25-29.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A 1.8 V 128 Mb mobile DRAM with hidden-precharged triple pumping scheme and dual-path hybrid current sense amplifier

AU - Chun, Ki Chul

AU - Sim, Jae Yoon

AU - Yoon, Hong Il

AU - Lee, Hyun Seok

AU - Hong, Sang Pyo

AU - Lee, Kyu Chan

AU - Yoo, Jei Hwan

AU - Seo, Dong Il

PY - 2004/2/1

Y1 - 2004/2/1

N2 - A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

AB - A 1.8 V low-voltage and low-power 128 Mb mobile SDRAM is designed and fabricated for hand-held, battery-operated electronic devices with a 0.15-μm CMOS technology. As an essential low-voltage circuit, a triple pumping scheme is proposed to generate a stable boosted voltage whose level exceeds over twice the supply voltage and which is required for the boosted word-line bias. In addition, to convert the bit-line data to a low-voltage CMOS level, a new NMOS and PMOS hybrid folded current sense amplifier with dual-path current sensing scheme is proposed to obtain the stable I-to-V gain as well as to improve the low-voltage margin.

UR - http://www.scopus.com/inward/record.url?scp=0742324338&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0742324338&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2003.09.008

DO - 10.1016/j.cap.2003.09.008

M3 - Article

AN - SCOPUS:0742324338

VL - 4

SP - 25

EP - 29

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 1

ER -