A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications

Zhichao Tan; Roel Daamen; Aurélie Humbert; Kamran Souri; Youngcheol Chae; Youri V. Ponomarev; Michiel A.P. Pertijs

doi:10.1109/ASSCC.2011.6123615

A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications

Zhichao Tan, Roel Daamen, Aurélie Humbert, Kamran Souri, Youngcheol Chae, Youri V. Ponomarev, Michiel A.P. Pertijs

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

29 Citations (Scopus)

Abstract

A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.

Original language	English
Title of host publication	2011 Proceedings of Technical Papers
Subtitle of host publication	IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011
Pages	105-108
Number of pages	4
DOIs	https://doi.org/10.1109/ASSCC.2011.6123615
Publication status	Published - 2011
Event	7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011 - Jeju, Korea, Republic of Duration: 2011 Nov 14 → 2011 Nov 16

Publication series

Name	2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011

Other

Other	7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011
Country	Korea, Republic of
City	Jeju
Period	11/11/14 → 11/11/16

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

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10.1109/ASSCC.2011.6123615

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Tan, Z., Daamen, R., Humbert, A., Souri, K., Chae, Y., Ponomarev, Y. V., & Pertijs, M. A. P. (2011). A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. In 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011 (pp. 105-108). [6123615] (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011). https://doi.org/10.1109/ASSCC.2011.6123615

Tan, Zhichao ; Daamen, Roel ; Humbert, Aurélie ; Souri, Kamran ; Chae, Youngcheol ; Ponomarev, Youri V. ; Pertijs, Michiel A.P. / A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. pp. 105-108 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011).

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title = "A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications",

abstract = "A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.",

author = "Zhichao Tan and Roel Daamen and Aur{\'e}lie Humbert and Kamran Souri and Youngcheol Chae and Ponomarev, {Youri V.} and Pertijs, {Michiel A.P.}",

year = "2011",

doi = "10.1109/ASSCC.2011.6123615",

language = "English",

isbn = "9781467303989",

series = "2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011",

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Tan, Z, Daamen, R, Humbert, A, Souri, K, Chae, Y, Ponomarev, YV & Pertijs, MAP 2011, A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. in 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011., 6123615, 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011, pp. 105-108, 7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011, Jeju, Korea, Republic of, 11/11/14. https://doi.org/10.1109/ASSCC.2011.6123615

A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. / Tan, Zhichao; Daamen, Roel; Humbert, Aurélie; Souri, Kamran; Chae, Youngcheol; Ponomarev, Youri V.; Pertijs, Michiel A.P.

2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 105-108 6123615 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Ponomarev, Youri V.

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AB - A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.

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Tan Z, Daamen R, Humbert A, Souri K, Chae Y, Ponomarev YV et al. A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. In 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 105-108. 6123615. (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011). https://doi.org/10.1109/ASSCC.2011.6123615

A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications

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