Abstract
A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.
| Original language | English |
|---|---|
| Title of host publication | 2011 Proceedings of Technical Papers |
| Subtitle of host publication | IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011 |
| Pages | 105-108 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2011 Dec 1 |
| Event | 7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011 - Jeju, Korea, Republic of Duration: 2011 Nov 14 → 2011 Nov 16 |
Publication series
| Name | 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011 |
|---|
Other
| Other | 7th IEEE Asian Solid-State Circuits Conference, A-SSCC 2011 |
|---|---|
| Country | Korea, Republic of |
| City | Jeju |
| Period | 11/11/14 → 11/11/16 |
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All Science Journal Classification (ASJC) codes
- Hardware and Architecture
- Electrical and Electronic Engineering
Cite this
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A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications. / Tan, Zhichao; Daamen, Roel; Humbert, Aurélie; Souri, Kamran; Chae, Youngcheol; Ponomarev, Youri V.; Pertijs, Michiel A.P.
2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011. 2011. p. 105-108 6123615 (2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A 1.8V 11μW CMOS smart humidity sensor for RFID sensing applications
AU - Tan, Zhichao
AU - Daamen, Roel
AU - Humbert, Aurélie
AU - Souri, Kamran
AU - Chae, Youngcheol
AU - Ponomarev, Youri V.
AU - Pertijs, Michiel A.P.
PY - 2011/12/1
Y1 - 2011/12/1
N2 - A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.
AB - A fully-integrated humidity sensor for a smart RFID sensor platform has been realized in 0.16μm standard CMOS technology. It consists of a top-metal finger-structure capacitor covered with a humidity-sensitive layer, combined with a micro-power flexible sensor interface based on a second-order incremental delta-sigma converter. The interface can be easily reconfigured to compensate for process variation of the sensing element. In a measurement time of 10.2 ms, the interface performs a 13-bits capacitance-to-digital conversion while consuming only 5.85 μA from 1.8 V supply. In combination with the co-integrated sensor capacitor, it thus provides a humidity-to-digital conversion with a resolution of 0.1% RH in the range of 20% to 90% RH at only 107 nJ per measurement. This represents a significant improvement in energy efficiency compared to existing capacitive-sensor interfaces with comparable performance.
UR - http://www.scopus.com/inward/record.url?scp=84856363401&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84856363401&partnerID=8YFLogxK
U2 - 10.1109/ASSCC.2011.6123615
DO - 10.1109/ASSCC.2011.6123615
M3 - Conference contribution
AN - SCOPUS:84856363401
SN - 9781467303989
T3 - 2011 Proceedings of Technical Papers: IEEE Asian Solid-State Circuits Conference 2011, A-SSCC 2011
SP - 105
EP - 108
BT - 2011 Proceedings of Technical Papers
ER -