Mobile DRAMs are essential to support memory-intensive operations for smartphones and tablet PCs [1, 2]. Since mobile DRAM standard (LPDDR), for the next generation, targets the speed specification of 51.2GB/s, its I/O interface demands high bandwidth, low power and high efficiency. Single-ended signaling has been used for LPDDR interfaces due to 100% pin efficiency. However, as the data rate increases simultaneous switching noise (SSN) limits the bandwidth. Although differential signaling can effectively remove SSN, it suffers from a pin efficiency drop of 50%, requiring that the signal bandwidth be doubled. To address this issue, differential coding schemes that encode signals over multiple channels have been explored to achieve pin efficiency and SSN robustness . This paper presents a 1V 15.6Gb/s C-PHY transceiver using tri-level signaling that consumes only 7.8mW, resulting in an energy-efficiency of 0.5pJ/b. Such a high efficiency is achieved by the use of a tri-level signaling, which is from C-PHY encoding scheme of MIPI alliance standards, in combination with an active-ground tri-level transmitter and a crosstalk-cancelled low-power receiver.