A 1V 7.8mW 15.6Gb/s C-PHY transceiver using tri-level signaling for post-LPDDR4

Woojun Choi, Taewoong Kim, Jongjoo Shim, Hyungsoo Kim, Gunhee Han, Youngcheol Chae

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Mobile DRAMs are essential to support memory-intensive operations for smartphones and tablet PCs [1, 2]. Since mobile DRAM standard (LPDDR), for the next generation, targets the speed specification of 51.2GB/s, its I/O interface demands high bandwidth, low power and high efficiency. Single-ended signaling has been used for LPDDR interfaces due to 100% pin efficiency. However, as the data rate increases simultaneous switching noise (SSN) limits the bandwidth. Although differential signaling can effectively remove SSN, it suffers from a pin efficiency drop of 50%, requiring that the signal bandwidth be doubled. To address this issue, differential coding schemes that encode signals over multiple channels have been explored to achieve pin efficiency and SSN robustness [4]. This paper presents a 1V 15.6Gb/s C-PHY transceiver using tri-level signaling that consumes only 7.8mW, resulting in an energy-efficiency of 0.5pJ/b. Such a high efficiency is achieved by the use of a tri-level signaling, which is from C-PHY encoding scheme of MIPI alliance standards, in combination with an active-ground tri-level transmitter and a crosstalk-cancelled low-power receiver.

Original languageEnglish
Title of host publication2017 IEEE International Solid-State Circuits Conference, ISSCC 2017
EditorsLaura C. Fujino
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages402-403
Number of pages2
ISBN (Electronic)9781509037575
DOIs
Publication statusPublished - 2017 Mar 2
Event64th IEEE International Solid-State Circuits Conference, ISSCC 2017 - San Francisco, United States
Duration: 2017 Feb 52017 Feb 9

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume60
ISSN (Print)0193-6530

Other

Other64th IEEE International Solid-State Circuits Conference, ISSCC 2017
Country/TerritoryUnited States
CitySan Francisco
Period17/2/517/2/9

Bibliographical note

Funding Information:
This research was supported by the Ministry of Science, ICT and Future Planning, Korea, under the "ICT Consilience Creative Program" (IITP-R0346-16-1008) supervised by the IITP.

Publisher Copyright:
© 2017 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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