Mobile DRAMs are essential to support memory-intensive operations for smartphones and tablet PCs [1, 2]. Since mobile DRAM standard (LPDDR), for the next generation, targets the speed specification of 51.2GB/s, its I/O interface demands high bandwidth, low power and high efficiency. Single-ended signaling has been used for LPDDR interfaces due to 100% pin efficiency. However, as the data rate increases simultaneous switching noise (SSN) limits the bandwidth. Although differential signaling can effectively remove SSN, it suffers from a pin efficiency drop of 50%, requiring that the signal bandwidth be doubled. To address this issue, differential coding schemes that encode signals over multiple channels have been explored to achieve pin efficiency and SSN robustness . This paper presents a 1V 15.6Gb/s C-PHY transceiver using tri-level signaling that consumes only 7.8mW, resulting in an energy-efficiency of 0.5pJ/b. Such a high efficiency is achieved by the use of a tri-level signaling, which is from C-PHY encoding scheme of MIPI alliance standards, in combination with an active-ground tri-level transmitter and a crosstalk-cancelled low-power receiver.
|Title of host publication||2017 IEEE International Solid-State Circuits Conference, ISSCC 2017|
|Editors||Laura C. Fujino|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||2|
|Publication status||Published - 2017 Mar 2|
|Event||64th IEEE International Solid-State Circuits Conference, ISSCC 2017 - San Francisco, United States|
Duration: 2017 Feb 5 → 2017 Feb 9
|Name||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Other||64th IEEE International Solid-State Circuits Conference, ISSCC 2017|
|Period||17/2/5 → 17/2/9|
Bibliographical noteFunding Information:
This research was supported by the Ministry of Science, ICT and Future Planning, Korea, under the "ICT Consilience Creative Program" (IITP-R0346-16-1008) supervised by the IITP.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering