Abstract
A K-/Ka-band distributed attenuator in a 28-nm CMOS process is presented for a phased array. The proposed voltage-controlled distributed attenuator is designed using nonuniform varistors for a wide attenuation range with a compact size. An attenuation range of 25 dB was achieved with only three sections, which are 90° apart. The phase imbalance of the proposed attenuator is minimized using an artificial quarter-wave transmission line with series-connected varistors. The measured insertion loss of the proposed attenuator is 1.6-2.5 dB from 20 to 36 GHz. The insertion phase imbalance is less than 10° within the same bandwidth. The input 1-dB compression point is 10.6 dBm (defined as the 1-dB drop in the maximum attenuation range) at 28 GHz. The total chip size, including pads, is 0.77 {\times } 0.42 mm2. The proposed attenuator has the highest attenuation range relative to the chip area compared with previously distributed attenuators.
Original language | English |
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Article number | 9380561 |
Pages (from-to) | 2485-2493 |
Number of pages | 9 |
Journal | IEEE Transactions on Microwave Theory and Techniques |
Volume | 69 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2021 May |
Bibliographical note
Funding Information:Manuscript received November 3, 2020; revised January 11, 2021; accepted January 30, 2021. Date of publication March 17, 2021; date of current version May 5, 2021. This work was supported in part by the Institute of Information and Communications Technology Planning and Evaluation (IITP) Grant funded by the Korean Government (MSIT) under Grant 2020000218 and in part by Samsung Electronics Co., Ltd. (IO201209-07875-01). (Corresponding author: Byung-Wook Min.) The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: bmin@yonsei.ac.kr).
Publisher Copyright:
© 1963-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Radiation
- Condensed Matter Physics
- Electrical and Electronic Engineering