A high-performance integrated optical receiver is realized in photonic BiCMOS technology. The receiver includes waveguide type Ge photodetector (PD), transimpedance amplifier, single-to-differential converter, postamplifier, and output buffer, all of which are monolithically implemented on a Si wafer. It achieves bit-error rate (BER) of 10-12 for 25-Gb/s 231 - 1 PRBS at the incident optical power of -10 dBm with energy efficiency of 1.5 pJ/b. In addition, with the help of the accurate Ge-PD circuit model, the simulated optical receiver eye diagrams and BER performances accurately predict the measured results.
Bibliographical noteFunding Information:
Manuscript received March 2, 2017; revised June 27, 2017; accepted July 19, 2017. Date of publication July 24, 2017; date of current version August 10, 2017. This work was supported in part by the National Research Foundation of Korea through the Korean Ministry of Science, ICT and Future Planning under Grant 2015R1A2A2A01007772 and in part by the Materials and Parts Technology R&D Program through the Korean Ministry of Trade, Industry & Energy under Project 10065666. (Corresponding author: Woo-Young Choi.) H.-Y. Jung, J.-M. Lee, and W.-Y. Choi are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: firstname.lastname@example.org).
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering