A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors

Eun Chul Park, Jun Bo Yoon, Songcheol Hong, Euisik Yoon

Research output: Contribution to journalConference article

16 Citations (Scopus)

Abstract

We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.

Original languageEnglish
Article number1471487
Pages (from-to)147-150
Number of pages4
JournalEuropean Solid-State Circuits Conference
Publication statusPublished - 2002 Dec 1
Event28th European Solid-State Circuits Conference, ESSCIRC 2002 - Florence, Italy
Duration: 2002 Sep 242002 Sep 26

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Variable frequency oscillators
Phase noise
MEMS
Varactors
Networks (circuits)
Natural frequencies
Metals

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

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title = "A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors",
abstract = "We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.",
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A 2.6 GHz low phase-noise VCO monolithically integrated with high Q MEMS inductors. / Park, Eun Chul; Yoon, Jun Bo; Hong, Songcheol; Yoon, Euisik.

In: European Solid-State Circuits Conference, 01.12.2002, p. 147-150.

Research output: Contribution to journalConference article

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AU - Park, Eun Chul

AU - Yoon, Jun Bo

AU - Hong, Songcheol

AU - Yoon, Euisik

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AB - We present a fully-integrated high-performance VCO with on-chip MEMS inductors for the first time. The MEMS inductors have been realized from the proprietary CMOS-compatible MEMS process that we have developed to provide suspended thick metal structures for high Q inductors. Core CMOS VCO circuits including varactors have been designed and fabricated using by a commercially available TSMC 0.18 μm mixed-mode CMOS process. As post-CMOS processes, MEMS inductors have been monolithically integrated on the top of the CMOS core circuits. Low phase noise of -122 dBc/Hz has been achieved at 600 kHz offset from a resonant frequency of 2.6 GHz in the fabricated single chip VCOs.

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