CMOS X-ray detectors used in industrial and medical equipment should provide a full image depth even for a specific region of interest, and require high resolution, low noise, and wide DR in a wafer-scale detector , . To achieve a wide DR, a large integration capacitor is required within the pixel to prevent its saturation at high dose, but this degrades image quality at low dose. To facilitate wide DR (>70dB), a conventional detector uses a column-parallel readout with a programmable gain amplifier (PGA) and an ADC . However, the PGA consumes substantially more power and area than the ADC, and its gain control requires multiple X-ray exposures. The use of switched-capacitor (SC) ΔΣ ADC provides wide DR with an improved noise performance , . However, its SC input draws high peak current that must be supplied by pixels and reference drivers, and its complex clock distribution also requires high power consumption.
|Title of host publication||2020 IEEE International Solid-State Circuits Conference, ISSCC 2020|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||3|
|Publication status||Published - 2020 Feb|
|Event||2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 - San Francisco, United States|
Duration: 2020 Feb 16 → 2020 Feb 20
|Name||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Conference||2020 IEEE International Solid-State Circuits Conference, ISSCC 2020|
|Period||20/2/16 → 20/2/20|
Bibliographical noteFunding Information:
This work was financially supported by Rayence. The authors thank to Mahdi Kashmiri for his support.
© 2020 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering