Abstract
CMOS X-ray detectors used in industrial and medical equipment should provide a full image depth even for a specific region of interest, and require high resolution, low noise, and wide DR in a wafer-scale detector [1], [4]. To achieve a wide DR, a large integration capacitor is required within the pixel to prevent its saturation at high dose, but this degrades image quality at low dose. To facilitate wide DR (>70dB), a conventional detector uses a column-parallel readout with a programmable gain amplifier (PGA) and an ADC [3]. However, the PGA consumes substantially more power and area than the ADC, and its gain control requires multiple X-ray exposures. The use of switched-capacitor (SC) ΔΣ ADC provides wide DR with an improved noise performance [2], [5]. However, its SC input draws high peak current that must be supplied by pixels and reference drivers, and its complex clock distribution also requires high power consumption.
Original language | English |
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Title of host publication | 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 434-436 |
Number of pages | 3 |
ISBN (Electronic) | 9781728132044 |
DOIs | |
Publication status | Published - 2020 Feb |
Event | 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 - San Francisco, United States Duration: 2020 Feb 16 → 2020 Feb 20 |
Publication series
Name | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
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Volume | 2020-February |
ISSN (Print) | 0193-6530 |
Conference
Conference | 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 |
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Country/Territory | United States |
City | San Francisco |
Period | 20/2/16 → 20/2/20 |
Bibliographical note
Publisher Copyright:© 2020 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering