A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs

Sangwoo Lee; Jinwoong Jeong; Taewoong Kim; Chanmin Park; Taewoo Kim; Youngcheol Chae

doi:10.1109/ISSCC19947.2020.9062919

A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs

Sangwoo Lee, Jinwoong Jeong, Taewoong Kim, Chanmin Park, Taewoo Kim, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

CMOS X-ray detectors used in industrial and medical equipment should provide a full image depth even for a specific region of interest, and require high resolution, low noise, and wide DR in a wafer-scale detector [1], [4]. To achieve a wide DR, a large integration capacitor is required within the pixel to prevent its saturation at high dose, but this degrades image quality at low dose. To facilitate wide DR (>70dB), a conventional detector uses a column-parallel readout with a programmable gain amplifier (PGA) and an ADC [3]. However, the PGA consumes substantially more power and area than the ADC, and its gain control requires multiple X-ray exposures. The use of switched-capacitor (SC) ΔΣ ADC provides wide DR with an improved noise performance [2], [5]. However, its SC input draws high peak current that must be supplied by pixels and reference drivers, and its complex clock distribution also requires high power consumption.

Original language	English
Title of host publication	2020 IEEE International Solid-State Circuits Conference, ISSCC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	434-436
Number of pages	3
ISBN (Electronic)	9781728132044
DOIs	https://doi.org/10.1109/ISSCC19947.2020.9062919
Publication status	Published - 2020 Feb
Event	2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 - San Francisco, United States Duration: 2020 Feb 16 → 2020 Feb 20

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	2020-February
ISSN (Print)	0193-6530

Conference

Conference	2020 IEEE International Solid-State Circuits Conference, ISSCC 2020
Country	United States
City	San Francisco
Period	20/2/16 → 20/2/20

Bibliographical note

Funding Information:
This work was financially supported by Rayence. The authors thank to Mahdi Kashmiri for his support.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISSCC19947.2020.9062919

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Lee, S., Jeong, J., Kim, T., Park, C., Kim, T., & Chae, Y. (2020). A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs. In 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 (pp. 434-436). [9062919] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 2020-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC19947.2020.9062919

Lee, Sangwoo ; Jeong, Jinwoong ; Kim, Taewoong ; Park, Chanmin ; Kim, Taewoo ; Chae, Youngcheol. / A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs. 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 434-436 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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abstract = "CMOS X-ray detectors used in industrial and medical equipment should provide a full image depth even for a specific region of interest, and require high resolution, low noise, and wide DR in a wafer-scale detector [1], [4]. To achieve a wide DR, a large integration capacitor is required within the pixel to prevent its saturation at high dose, but this degrades image quality at low dose. To facilitate wide DR (>70dB), a conventional detector uses a column-parallel readout with a programmable gain amplifier (PGA) and an ADC [3]. However, the PGA consumes substantially more power and area than the ADC, and its gain control requires multiple X-ray exposures. The use of switched-capacitor (SC) ΔΣ ADC provides wide DR with an improved noise performance [2], [5]. However, its SC input draws high peak current that must be supplied by pixels and reference drivers, and its complex clock distribution also requires high power consumption.",

author = "Sangwoo Lee and Jinwoong Jeong and Taewoong Kim and Chanmin Park and Taewoo Kim and Youngcheol Chae",

note = "Funding Information: This work was financially supported by Rayence. The authors thank to Mahdi Kashmiri for his support.; 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020 ; Conference date: 16-02-2020 Through 20-02-2020",

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Lee, S, Jeong, J, Kim, T, Park, C, Kim, T & Chae, Y 2020, A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs. in 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020., 9062919, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 2020-February, Institute of Electrical and Electronics Engineers Inc., pp. 434-436, 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020, San Francisco, United States, 20/2/16. https://doi.org/10.1109/ISSCC19947.2020.9062919

A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs. / Lee, Sangwoo; Jeong, Jinwoong; Kim, Taewoong; Park, Chanmin; Kim, Taewoo; Chae, Youngcheol.

2020 IEEE International Solid-State Circuits Conference, ISSCC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 434-436 9062919 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 2020-February).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Lee S, Jeong J, Kim T, Park C, Kim T, Chae Y. A 5.2Mpixel 88.4dB-DR 12in CMOS X-Ray Detector with 16b Column-Parallel Continuous-Time ΔΣ ADCs. In 2020 IEEE International Solid-State Circuits Conference, ISSCC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 434-436. 9062919. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC19947.2020.9062919