A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth

Minsu Ko, Holger Rücker, Woo Young Choi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-μm SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm x 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.

Original languageEnglish
Title of host publication2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages73-76
Number of pages4
DOIs
Publication statusPublished - 2010
Event2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States
Duration: 2010 Jan 112010 Jan 13

Publication series

Name2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
CountryUnited States
CityNew Orleans, LA
Period10/1/1110/1/13

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Ko, M., Rücker, H., & Choi, W. Y. (2010). A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth. In 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers (pp. 73-76). [5422955] (2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers). https://doi.org/10.1109/SMIC.2010.5422955