A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth

Minsu Ko; Holger Rücker; Woo Young Choi

doi:10.1109/SMIC.2010.5422955

A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth

Minsu Ko, Holger Rücker, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Citations (Scopus)

Abstract

A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-μm SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm x 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.

Original language	English
Title of host publication	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers
Pages	73-76
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2010.5422955
Publication status	Published - 2010
Event	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - New Orleans, LA, United States Duration: 2010 Jan 11 → 2010 Jan 13

Publication series

Name	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers

Other

Other	2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010
Country/Territory	United States
City	New Orleans, LA
Period	10/1/11 → 10/1/13

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Access to Document

10.1109/SMIC.2010.5422955

Cite this

Ko, M., Rücker, H., & Choi, W. Y. (2010). A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth. In 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers (pp. 73-76). [5422955] (2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers). https://doi.org/10.1109/SMIC.2010.5422955

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title = "A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth",

abstract = "A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-μm SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm x 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.",

author = "Minsu Ko and Holger R{\"u}cker and Choi, {Woo Young}",

year = "2010",

doi = "10.1109/SMIC.2010.5422955",

language = "English",

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note = "2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 ; Conference date: 11-01-2010 Through 13-01-2010",

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Ko, M, Rücker, H & Choi, WY 2010, A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth. in 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers., 5422955, 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers, pp. 73-76, 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010, New Orleans, LA, United States, 10/1/11. https://doi.org/10.1109/SMIC.2010.5422955

A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth. / Ko, Minsu; Rücker, Holger; Choi, Woo Young.

2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers. 2010. p. 73-76 5422955 (2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-μm SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm x 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.

AB - A Gilbert-cell direct up-conversion mixer is realized for 57-64-GHz unlicensed-band applications. The mixer with on-chip stacked inductors and LO, RF baluns is fabricated in 0.25-μm SiGe:C BiCMOS technology. The fabricated mixer achieves conversion gain of 4 ± 1.5 dB and 5 ± 1 dB for upper and lower sideband, respectively, in frequency range from 53 to 64 GHz. The LO-to-RF isolation is higher than 30 dB. The mixer has IF bandwidth of 4 GHz, and the output-referred 1-dB compression point of -9.5 dBm. It occupies a chip area of 0.46 mm x 0.46 mm and consumes 10 mA with supply voltage of 2.5 V.

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Ko M, Rücker H, Choi WY. A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth. In 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers. 2010. p. 73-76. 5422955. (2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2010 - Digest of Papers). doi: 10.1109/SMIC.2010.5422955

A 53-64-GHz SiGe up-conversion mixer with 4-GHz IF bandwidth

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