A 55μW 93.1dB-DR 20kHz-BW single-bit CT ΔΣ modulator with negative R-assisted integrator achieving 178.7dB FoM in 65nm CMOS

Moonhyung Jang, Sangwoo Lee, Youngcheol Chae

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper presents a 3rd order single-bit CT ΔΣ modulator with active-RC integrators using negative-R assistant at virtual ground, which mitigates opamp's requirements including the thermal noise and linearity leading to a drastic power-saving. Fabricated in a 65nm CMOS process, the modulator occupies area of 0.27mm2. It achieves 100.5dB SFDR and 93.1dB DR in 20kHz BW, while consuming only 55μW from a 1.2V supply. This results in Schreier FoM of 178.7dB and Walden FoM of 63.1fJ/step.

Original languageEnglish
Title of host publication2017 Symposium on VLSI Circuits, VLSI Circuits 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesC40-C41
ISBN (Electronic)9784863486065
DOIs
Publication statusPublished - 2017 Aug 10
Event31st Symposium on VLSI Circuits, VLSI Circuits 2017 - Kyoto, Japan
Duration: 2017 Jun 52017 Jun 8

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other31st Symposium on VLSI Circuits, VLSI Circuits 2017
CountryJapan
CityKyoto
Period17/6/517/6/8

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Jang, M., Lee, S., & Chae, Y. (2017). A 55μW 93.1dB-DR 20kHz-BW single-bit CT ΔΣ modulator with negative R-assisted integrator achieving 178.7dB FoM in 65nm CMOS. In 2017 Symposium on VLSI Circuits, VLSI Circuits 2017 (pp. C40-C41). [8008540] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIC.2017.8008540