A 5.5-mW +9.4-dBm IIP3 1.8-dB NF CMOS LNA employing multiple gated transistors with capacitance desensitization

Tae Hwan Jin; Tae Wook Kim

doi:10.1109/TMTT.2010.2063790

A 5.5-mW +9.4-dBm IIP3 1.8-dB NF CMOS LNA employing multiple gated transistors with capacitance desensitization

Tae Hwan Jin, Tae Wook Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

A capacitance desensitization technique is proposed for a multiple gated transistors amplifier with source degeneration to relax second-order distortion contribution to a third-order intermodulation distortion (IMD3), as well as an induced-gate noise contribution to noise figure. An extra capacitance, which is added between gate and source nodes of input transistors in a parallel manner, can desensitize the contribution of second-order harmonic feedback to IMD3. The capacitance is useful for optimizing noise figure, as well by controlling the input matching network quality factor (Q), which can desensitize the induced-gate noise contribution to noise figure. The low-noise amplifier is implemented with the proposed technique using 1P6M 0.18- μm CMOS technology for 900-MHz code division multiple access (CDMA) receivers. It shows a third-order intercept point of +9.4 dBm and noise figure of 1.8 dB while consuming 5.5 mW at 1.5 V.

Original language	English
Article number	5560699
Pages (from-to)	2529-2537
Number of pages	9
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TMTT.2010.2063790
Publication status	Published - 2010 Oct

Bibliographical note

Funding Information:
Manuscript received October 07, 2009; revised June 07, 2010; accepted June 30, 2010. Date of publication September 02, 2010; date of current version October 13, 2010. This work was supported by the Mid-career Researcher Program through a National Research Foundation (NRF) Grant funded by the Ministry of Education, Science and Technology (MEST) (2010-0012315).

All Science Journal Classification (ASJC) codes

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "A 5.5-mW +9.4-dBm IIP3 1.8-dB NF CMOS LNA employing multiple gated transistors with capacitance desensitization",

abstract = "A capacitance desensitization technique is proposed for a multiple gated transistors amplifier with source degeneration to relax second-order distortion contribution to a third-order intermodulation distortion (IMD3), as well as an induced-gate noise contribution to noise figure. An extra capacitance, which is added between gate and source nodes of input transistors in a parallel manner, can desensitize the contribution of second-order harmonic feedback to IMD3. The capacitance is useful for optimizing noise figure, as well by controlling the input matching network quality factor (Q), which can desensitize the induced-gate noise contribution to noise figure. The low-noise amplifier is implemented with the proposed technique using 1P6M 0.18- μm CMOS technology for 900-MHz code division multiple access (CDMA) receivers. It shows a third-order intercept point of +9.4 dBm and noise figure of 1.8 dB while consuming 5.5 mW at 1.5 V.",

author = "Jin, {Tae Hwan} and Kim, {Tae Wook}",

note = "Funding Information: Manuscript received October 07, 2009; revised June 07, 2010; accepted June 30, 2010. Date of publication September 02, 2010; date of current version October 13, 2010. This work was supported by the Mid-career Researcher Program through a National Research Foundation (NRF) Grant funded by the Ministry of Education, Science and Technology (MEST) (2010-0012315).",

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A 5.5-mW +9.4-dBm IIP3 1.8-dB NF CMOS LNA employing multiple gated transistors with capacitance desensitization

Abstract

Bibliographical note

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