A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

Yongtae Lee; Woojun Choi; Taewoong Kim; Seungwoo Song; Kofi A.A. Makinwa; Youngcheol Chae

doi:10.1109/LSSC.2019.2937441

A 5800-μ m₂Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

Yongtae Lee, Woojun Choi, Taewoong Kim, Seungwoo Song, Kofi A.A. Makinwa, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

Original language	English
Article number	8877960
Pages (from-to)	67-70
Number of pages	4
Journal	IEEE Solid-State Circuits Letters
Volume	2
Issue number	9
DOIs	https://doi.org/10.1109/LSSC.2019.2937441
Publication status	Published - 2019 Sep

Bibliographical note

Funding Information:
Manuscript received May 30, 2019; revised July 9, 2019 and August 11, 2019; accepted August 19, 2019. Date of publication October 15, 2019; date of current version October 15, 2019. This article was approved by Associate Editor Robert Henderson. This work was supported by the National Research Foundation of Korea (NRF) grant funded through the Korea government (MSIT, NRF-2016-Global Ph.D. Fellowship Program) under Grant 2018R1A4A1025986. (Corresponding author: Youngcheol Chae.) Y. Lee, W. Choi, T. Kim, S. Song, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonesi.ac.kr).

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Access to Document

10.1109/LSSC.2019.2937441

Cite this

@article{ac5023429ece44298aaf91fb2b070f4e,

title = "A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS",

abstract = "This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2. ",

author = "Yongtae Lee and Woojun Choi and Taewoong Kim and Seungwoo Song and Makinwa, {Kofi A.A.} and Youngcheol Chae",

note = "Funding Information: Manuscript received May 30, 2019; revised July 9, 2019 and August 11, 2019; accepted August 19, 2019. Date of publication October 15, 2019; date of current version October 15, 2019. This article was approved by Associate Editor Robert Henderson. This work was supported by the National Research Foundation of Korea (NRF) grant funded through the Korea government (MSIT, NRF-2016-Global Ph.D. Fellowship Program) under Grant 2018R1A4A1025986. (Corresponding author: Youngcheol Chae.) Y. Lee, W. Choi, T. Kim, S. Song, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonesi.ac.kr). Publisher Copyright: {\textcopyright} 2018 IEEE.",

year = "2019",

month = sep,

doi = "10.1109/LSSC.2019.2937441",

language = "English",

volume = "2",

pages = "67--70",

journal = "IEEE Solid-State Circuits Letters",

issn = "2573-9603",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

A 5800-μ m₂Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS. / Lee, Yongtae; Choi, Woojun; Kim, Taewoong; Song, Seungwoo; Makinwa, Kofi A.A.; Chae, Youngcheol.

In: IEEE Solid-State Circuits Letters, Vol. 2, No. 9, 8877960, 09.2019, p. 67-70.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

AU - Lee, Yongtae

AU - Choi, Woojun

AU - Kim, Taewoong

AU - Song, Seungwoo

AU - Makinwa, Kofi A.A.

AU - Chae, Youngcheol

N1 - Funding Information: Manuscript received May 30, 2019; revised July 9, 2019 and August 11, 2019; accepted August 19, 2019. Date of publication October 15, 2019; date of current version October 15, 2019. This article was approved by Associate Editor Robert Henderson. This work was supported by the National Research Foundation of Korea (NRF) grant funded through the Korea government (MSIT, NRF-2016-Global Ph.D. Fellowship Program) under Grant 2018R1A4A1025986. (Corresponding author: Youngcheol Chae.) Y. Lee, W. Choi, T. Kim, S. Song, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonesi.ac.kr). Publisher Copyright: © 2018 IEEE.

PY - 2019/9

Y1 - 2019/9

N2 - This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

AB - This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

UR - http://www.scopus.com/inward/record.url?scp=85091322867&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85091322867&partnerID=8YFLogxK

U2 - 10.1109/LSSC.2019.2937441

DO - 10.1109/LSSC.2019.2937441

M3 - Article

AN - SCOPUS:85091322867

VL - 2

SP - 67

EP - 70

JO - IEEE Solid-State Circuits Letters

JF - IEEE Solid-State Circuits Letters

SN - 2573-9603

IS - 9

M1 - 8877960

ER -