A 5800-μ m2Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) From-50 °c to 105 °c in 65-nm CMOS

Yongtae Lee, Woojun Choi, Taewoong Kim, Seungwoo Song, Kofi A.A. Makinwa, Youngcheol Chae

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8 Citations (Scopus)


This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor, fabricated in 65-nm CMOS, occupies 5800 μ m2 and achieves moderate accuracy [±1.2 °C (3 σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies, it consumes 32.5-μ A and achieves 2.8-mK resolution in a 1-ms conversion time, which corresponds to a resolution FoM of 0.26 pJ K2.

Original languageEnglish
Article number8877960
Pages (from-to)67-70
Number of pages4
JournalIEEE Solid-State Circuits Letters
Issue number9
Publication statusPublished - 2019 Sep

Bibliographical note

Funding Information:
Manuscript received May 30, 2019; revised July 9, 2019 and August 11, 2019; accepted August 19, 2019. Date of publication October 15, 2019; date of current version October 15, 2019. This article was approved by Associate Editor Robert Henderson. This work was supported by the National Research Foundation of Korea (NRF) grant funded through the Korea government (MSIT, NRF-2016-Global Ph.D. Fellowship Program) under Grant 2018R1A4A1025986. (Corresponding author: Youngcheol Chae.) Y. Lee, W. Choi, T. Kim, S. Song, and Y. Chae are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: ychae@yonesi.ac.kr).

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering


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