A 5800-μm2 Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) from -50 °c to 105 °c in 65-nm CMOS

Yongtae Lee, Woojun Choi, Taewoong Kim, Seungwoo Song, Kofi A.A. Makinwa, Youngcheol Chae

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This letter describes a compact resistor-based temperature sensor intended for the thermal monitoring of microprocessors and DRAMs. It consists of an RC poly phase filter (PPF) that is read out by a frequency-locked loop (FLL) based on a dual zero-crossing (ZC) detection scheme. The sensor,fabricated in 65-nm CMOS,occupies 5800 μm2 and achieves moderate accuracy [±1.2 °C (3σ)] over a wide temperature range (-50 °C to 105 °C) after a one-point trim. This is 2× better than the previous compact resistor-based sensors. Operating from 0.85 to 1.3-V supplies,it consumes 32.5-μA and achieves 2.8-mK resolution in a 1-ms conversion time,which corresponds to a resolution FoM of 0.26 pJ•K2.

Original languageEnglish
Title of host publicationESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages67-70
Number of pages4
ISBN (Electronic)9781728115504
DOIs
Publication statusPublished - 2019 Sep
Event45th IEEE European Solid State Circuits Conference, ESSCIRC 2019 - Cracow, Poland
Duration: 2019 Sep 232019 Sep 26

Publication series

NameESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference

Conference

Conference45th IEEE European Solid State Circuits Conference, ESSCIRC 2019
CountryPoland
CityCracow
Period19/9/2319/9/26

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Lee, Y., Choi, W., Kim, T., Song, S., Makinwa, K. A. A., & Chae, Y. (2019). A 5800-μm2 Resistor-Based Temperature Sensor with a One-Point Trimmed Inaccuracy of ±1.2 °c (3σ) from -50 °c to 105 °c in 65-nm CMOS. In ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (pp. 67-70). [8902650] (ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ESSCIRC.2019.8902650