As a semiconductor microfabrication process is advanced, there are needs for implementing various components on a wafer. A 60 GHz Rotman lens on a silicon wafer has been proposed for system-on-a-chip (SoC) and system-in-package (SiP) applications. The lens was fabricated on a high resistivity silicon wafer in semiconductor process. The lens has five beam ports and seven array ports. It was observed from the measurement that the phase and the amplitude of the Rotman lens are well distributed. The beam patterns were synthesized from the measured S-parameters. The beam directions are ±30°, ±16°, and 0°, and the half power beam width are 15.37°, 14.68°, 14.53°, 14.68°, and 15.37°, respectively. The feasibility of the lens on a silicon wafer has been well explored.