A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

Injun Park; Woojin Jo; Chanmin Park; Byungchoul Park; Jimin Cheon; Youngcheol Chae

doi:10.23919/VLSIC.2019.8778169

A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

Injun Park, Woojin Jo, Chanmin Park, Byungchoul Park, Jimin Cheon, Youngcheol Chae

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.

Original language	English
Title of host publication	2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	C214-C215
ISBN (Electronic)	9784863487185
DOIs	https://doi.org/10.23919/VLSIC.2019.8778169
Publication status	Published - 2019 Jun
Event	33rd Symposium on VLSI Circuits, VLSI Circuits 2019 - Kyoto, Japan Duration: 2019 Jun 9 → 2019 Jun 14

Publication series

Name	IEEE Symposium on VLSI Circuits, Digest of Technical Papers
Volume	2019-June

Conference

Conference	33rd Symposium on VLSI Circuits, VLSI Circuits 2019
Country/Territory	Japan
City	Kyoto
Period	19/6/9 → 19/6/14

Bibliographical note

Publisher Copyright:
© 2019 JSAP.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.23919/VLSIC.2019.8778169

Cite this

Park, I., Jo, W., Park, C., Park, B., Cheon, J., & Chae, Y. (2019). A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. In 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers (pp. C214-C215). [8778169] (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIC.2019.8778169

Park, Injun ; Jo, Woojin ; Park, Chanmin ; Park, Byungchoul ; Cheon, Jimin ; Chae, Youngcheol. / A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. pp. C214-C215 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers).

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abstract = "This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.",

author = "Injun Park and Woojin Jo and Chanmin Park and Byungchoul Park and Jimin Cheon and Youngcheol Chae",

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Park, I, Jo, W, Park, C, Park, B, Cheon, J & Chae, Y 2019, A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. in 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers., 8778169, IEEE Symposium on VLSI Circuits, Digest of Technical Papers, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. C214-C215, 33rd Symposium on VLSI Circuits, VLSI Circuits 2019, Kyoto, Japan, 19/6/9. https://doi.org/10.23919/VLSIC.2019.8778169

A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. / Park, Injun; Jo, Woojin; Park, Chanmin; Park, Byungchoul; Cheon, Jimin; Chae, Youngcheol.

2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. p. C214-C215 8778169 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Park I, Jo W, Park C, Park B, Cheon J, Chae Y. A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. In 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2019. p. C214-C215. 8778169. (IEEE Symposium on VLSI Circuits, Digest of Technical Papers). https://doi.org/10.23919/VLSIC.2019.8778169

A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

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