Abstract
This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.
| Original language | English |
|---|---|
| Title of host publication | 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | C214-C215 |
| ISBN (Electronic) | 9784863487185 |
| DOIs | |
| Publication status | Published - 2019 Jun |
| Event | 33rd Symposium on VLSI Circuits, VLSI Circuits 2019 - Kyoto, Japan Duration: 2019 Jun 9 → 2019 Jun 14 |
Publication series
| Name | IEEE Symposium on VLSI Circuits, Digest of Technical Papers |
|---|---|
| Volume | 2019-June |
Conference
| Conference | 33rd Symposium on VLSI Circuits, VLSI Circuits 2019 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 19/6/9 → 19/6/14 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
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A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition. / Park, Injun; Jo, Woojin; Park, Chanmin; Park, Byungchoul; Cheon, Jimin; Chae, Youngcheol.
2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2019. p. C214-C215 8778169 (IEEE Symposium on VLSI Circuits, Digest of Technical Papers; Vol. 2019-June).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - A 640×640 Fully Dynamic CMOS Image Sensor for Always-On Object Recognition
AU - Park, Injun
AU - Jo, Woojin
AU - Park, Chanmin
AU - Park, Byungchoul
AU - Cheon, Jimin
AU - Chae, Youngcheol
PY - 2019/6
Y1 - 2019/6
N2 - This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.
AB - This paper presents a 640× 640 fully dynamic CMOS image sensor for always-on object recognition. A pixel output is sampled with a dynamic source follower (SF) into a parasitic column capacitor, which is readout by a dynamic single-slope (SS) ADC based on a dynamic bias comparator and an energy-efficient two-step counter. The sensor, implemented in a 0.11μm CMOS, achieves 0.3% peak non-linearity, 6.8e-rms- RN and 67dB DR. Its power consumption is only 2.1mW at 44fps and is further reduced to 260μW at 15fps with sub-sampled 320 × 320 mode. This work achieves the state-of-the-art energy-efficiency FoM of 0.7e-\cdot nJ.
UR - http://www.scopus.com/inward/record.url?scp=85073905557&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85073905557&partnerID=8YFLogxK
U2 - 10.23919/VLSIC.2019.8778169
DO - 10.23919/VLSIC.2019.8778169
M3 - Conference contribution
AN - SCOPUS:85073905557
T3 - IEEE Symposium on VLSI Circuits, Digest of Technical Papers
SP - C214-C215
BT - 2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers
PB - Institute of Electrical and Electronics Engineers Inc.
ER -