This paper presents a time-of-flight (ToF) image sensor for outdoor applications. The sensor employs a gain-modulated avalanche photodiode (APD) that achieves high modulation frequency. The suppression capability of background light is greatly improved up to 200klx by using a combination of in pixel auto-zeroing and chopping. A64 × 64 APD-based ToF sensor is fabricated in a0.11 μ m CMOS. It achieves depth ranges from 0.5 to 2 m with 25MHz modulation and from 2 to 20 m with 1.56MHz modulation. For both ranges, it achieves a non-linearity below 0.8% and a precision below 3.4% at a 3D frame rate of 96fps.
|Title of host publication||2019 Symposium on VLSI Circuits, VLSI Circuits 2019 - Digest of Technical Papers|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2019 Jun|
|Event||33rd Symposium on VLSI Circuits, VLSI Circuits 2019 - Kyoto, Japan|
Duration: 2019 Jun 9 → 2019 Jun 14
|Name||IEEE Symposium on VLSI Circuits, Digest of Technical Papers|
|Conference||33rd Symposium on VLSI Circuits, VLSI Circuits 2019|
|Period||19/6/9 → 19/6/14|
Bibliographical notePublisher Copyright:
© 2019 JSAP.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering