A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA employing multiple gated transistors with bulk-bias control

Tae Hwan Jin, tae wook Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

This letter presents a gm″-cancellation range extension method with bulk-bias control that was applied to a Multiple Gated Transistors (MGTR) technique, which is a linearity enhancement technique for RF amplifiers. Instead of adjusting the gate-biasing voltage of the auxiliary transistor (AT) (Vshift) in conventional gm″-cancellation, we propose to use the bulk-biasing voltage, VBS, which allows for range extension of the gm″-cancellation of AT. The proposed technique does not require any other additional biasing circuits and has the benefit of consuming less power. The proposed low noise amplifier (LNA) is implemented in 0.18 μm 1-poly-6-metal CMOS technology. Our results show that the LNA achieves a noise figure of 1.76 dB, a +12.45 dBm input third order intercept point (IIP3), and a 15 dB power gain at 0.9 GHz, with the core LNA consuming 4.5 mA from a 1.5 V power supply.

Original languageEnglish
Article number6034540
Pages (from-to)616-618
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume21
Issue number11
DOIs
Publication statusPublished - 2011 Nov 1

Fingerprint

Low noise amplifiers
low noise
CMOS
Transistors
transistors
amplifiers
cancellation
Noise figure
Electric potential
power gain
electric potential
power supplies
linearity
Networks (circuits)
adjusting
Metals
augmentation
metals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA employing multiple gated transistors with bulk-bias control. / Jin, Tae Hwan; Kim, tae wook.

In: IEEE Microwave and Wireless Components Letters, Vol. 21, No. 11, 6034540, 01.11.2011, p. 616-618.

Research output: Contribution to journalArticle

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