A 6.75 mW + 12.45 dBm IIP3 1.76 dB NF 0.9 GHz CMOS LNA employing multiple gated transistors with bulk-bias control

Tae Hwan Jin, Tae Wook Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

This letter presents a gm″-cancellation range extension method with bulk-bias control that was applied to a Multiple Gated Transistors (MGTR) technique, which is a linearity enhancement technique for RF amplifiers. Instead of adjusting the gate-biasing voltage of the auxiliary transistor (AT) (Vshift) in conventional gm″-cancellation, we propose to use the bulk-biasing voltage, VBS, which allows for range extension of the gm″-cancellation of AT. The proposed technique does not require any other additional biasing circuits and has the benefit of consuming less power. The proposed low noise amplifier (LNA) is implemented in 0.18 μm 1-poly-6-metal CMOS technology. Our results show that the LNA achieves a noise figure of 1.76 dB, a +12.45 dBm input third order intercept point (IIP3), and a 15 dB power gain at 0.9 GHz, with the core LNA consuming 4.5 mA from a 1.5 V power supply.

Original languageEnglish
Article number6034540
Pages (from-to)616-618
Number of pages3
JournalIEEE Microwave and Wireless Components Letters
Volume21
Issue number11
DOIs
Publication statusPublished - 2011 Nov

Bibliographical note

Funding Information:
Manuscript received May 24, 2011; revised August 16, 2011; accepted August 20, 2011. Date of publication October 06, 2011; date of current version November 09, 2011. This work was supported by the Basic Science Research program through the NRF of Korea funded by the MEST ( 2011-0003356) and by IDEC.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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