Abstract
The 77-81GHz power amplifier is designed using a 28nm CMOS process. The circuit is designed with cascode technique for a drive stage and neutralization technique for a power stage. Each stage consists of a matching network with transformer and inductors. The simulated maximum output power is 7.6 dBm, and the maximum power efficiency is 8%. The small signal gain at 77 GHz obtained from the simulation is 16.7 dB. The designed power amplifier of 1V of the supply power consumes 66mW of DC power.
| Original language | English |
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| Title of host publication | 2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781665408578 |
| DOIs | |
| Publication status | Published - 2021 |
| Event | 2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021 - Gangwon, Korea, Republic of Duration: 2021 Nov 1 → 2021 Nov 3 |
Publication series
| Name | 2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021 |
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Conference
| Conference | 2021 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2021 |
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| Country/Territory | Korea, Republic of |
| City | Gangwon |
| Period | 21/11/1 → 21/11/3 |
Bibliographical note
Funding Information:This work was supported by Samsung Electronics Co. Ltd. (2020-11-1539). The CAD tool was supported by KAIST IDEC.
Publisher Copyright:
© 2021 IEEE.
All Science Journal Classification (ASJC) codes
- Instrumentation
- Computer Networks and Communications
- Signal Processing
- Electrical and Electronic Engineering