A 512 × 384 CMOS image sensor in 0.18μm 1P4M technology with 5.9μm pixel pitch and a dynamic reset current source to compensate for kTC reset noise and fixed pattern noise is presented. A total of 390μV(rms) readout noise, and a factor of two improvement over conventional reset is achieved. The chip operates at 1.8V and consumes 40mW excluding I/O and off-chip DAC for a single-slope ADC at 24frames/s.
|Journal||Digest of Technical Papers - IEEE International Solid-State Circuits Conference|
|Publication status||Published - 2004 Jun 2|
|Event||Digest of Technical Papers - 2004 IEEE International Solid-State Circuits Conference - San Francisco, CA., United States|
Duration: 2003 Feb 15 → 2003 Feb 19
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering