TY - JOUR
T1 - A CMOS temperature sensor with a voltage-calibrated inaccuracy of ± 0.15 °c (37sigma;) From-55°C to 125°C
AU - Souri, Kamran
AU - Chae, Youngcheol
AU - Makinwa, Kofi A.A.
PY - 2013
Y1 - 2013
N2 - This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy-efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C 3σ from-55°C to 125°C. Over the same range, devices from a second lot achieved an inaccuracy of ± 0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.
AB - This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy-efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C 3σ from-55°C to 125°C. Over the same range, devices from a second lot achieved an inaccuracy of ± 0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.
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U2 - 10.1109/JSSC.2012.2214831
DO - 10.1109/JSSC.2012.2214831
M3 - Article
AN - SCOPUS:84872114156
VL - 48
SP - 292
EP - 301
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 1
M1 - 6323049
ER -