Abstract
This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy-efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C 3σ from-55°C to 125°C. Over the same range, devices from a second lot achieved an inaccuracy of ± 0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.
| Original language | English |
|---|---|
| Article number | 6323049 |
| Pages (from-to) | 292-301 |
| Number of pages | 10 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 48 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
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A CMOS temperature sensor with a voltage-calibrated inaccuracy of ± 0.15 °c (37sigma;) From-55°C to 125°C. / Souri, Kamran; Chae, Youngcheol; Makinwa, Kofi A.A.
In: IEEE Journal of Solid-State Circuits, Vol. 48, No. 1, 6323049, 01.01.2013, p. 292-301.Research output: Contribution to journal › Article
TY - JOUR
T1 - A CMOS temperature sensor with a voltage-calibrated inaccuracy of ± 0.15 °c (37sigma;) From-55°C to 125°C
AU - Souri, Kamran
AU - Chae, Youngcheol
AU - Makinwa, Kofi A.A.
PY - 2013/1/1
Y1 - 2013/1/1
N2 - This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy-efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C 3σ from-55°C to 125°C. Over the same range, devices from a second lot achieved an inaccuracy of ± 0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.
AB - This paper describes the design of a low power, energy-efficient CMOS smart temperature sensor intended for RFID temperature sensing. The BJT-based sensor employs an energy-efficient 2nd-order zoom ADC, which combines a coarse 5-bit SAR conversion with a fine 10-bit ΔΣ conversion. Moreover, a new integration scheme is proposed that halves the conversion time, while requiring no extra supply current. To meet the stringent cost constraints on RFID tags, a fast voltage calibration technique is used, which can be carried out in only 200 msec. After batch calibration and an individual room-temperature calibration, the sensor achieves an inaccuracy of ±0.15°C 3σ from-55°C to 125°C. Over the same range, devices from a second lot achieved an inaccuracy of ± 0.25°C (3σ) in both ceramic and plastic packages. The sensor occupies 0.08 mm2 in a 0.16 μm CMOS process, draws 3.4 μA from a 1.5 V to 2 V supply, and achieves a resolution of 20 mK in a conversion time of 5.3 msec. This corresponds to a minimum energy dissipation of 27 nJ per conversion.
UR - http://www.scopus.com/inward/record.url?scp=84872114156&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84872114156&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2012.2214831
DO - 10.1109/JSSC.2012.2214831
M3 - Article
AN - SCOPUS:84872114156
VL - 48
SP - 292
EP - 301
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 1
M1 - 6323049
ER -