A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Kamran Souri, Youngcheol Chae, Kofi Makinwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

44 Citations (Scopus)

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20x less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd-order ΔΣ conversion.

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages208-209
Number of pages2
DOIs
Publication statusPublished - 2012 May 11
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 2012 Feb 192012 Feb 23

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Other

Other59th International Solid-State Circuits Conference, ISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period12/2/1912/2/23

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Souri, K., Chae, Y., & Makinwa, K. (2012). A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers (pp. 208-209). [6176978] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55). https://doi.org/10.1109/ISSCC.2012.6176978