A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Kamran Souri; Youngcheol Chae; Kofi Makinwa

doi:10.1109/ISSCC.2012.6176978

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Kamran Souri, Youngcheol Chae, Kofi Makinwa

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

50 Citations (Scopus)

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20x less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 ^nd-order ΔΣ conversion.

Original language	English
Title of host publication	2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages	208-209
Number of pages	2
DOIs	https://doi.org/10.1109/ISSCC.2012.6176978
Publication status	Published - 2012
Event	59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States Duration: 2012 Feb 19 → 2012 Feb 23

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	55
ISSN (Print)	0193-6530

Other

Other	59th International Solid-State Circuits Conference, ISSCC 2012
Country/Territory	United States
City	San Francisco, CA
Period	12/2/19 → 12/2/23

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISSCC.2012.6176978

Cite this

Souri, K., Chae, Y., & Makinwa, K. (2012). A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers (pp. 208-209). [6176978] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55). https://doi.org/10.1109/ISSCC.2012.6176978

@inproceedings{324054f2f442440ca177e596939e4dd2,

title = "A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C",

abstract = "This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20x less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd-order ΔΣ conversion.",

author = "Kamran Souri and Youngcheol Chae and Kofi Makinwa",

year = "2012",

doi = "10.1109/ISSCC.2012.6176978",

language = "English",

isbn = "9781467303736",

series = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

pages = "208--209",

booktitle = "2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers",

note = "59th International Solid-State Circuits Conference, ISSCC 2012 ; Conference date: 19-02-2012 Through 23-02-2012",

}

Souri, K, Chae, Y & Makinwa, K 2012, A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. in 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers., 6176978, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 55, pp. 208-209, 59th International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, United States, 12/2/19. https://doi.org/10.1109/ISSCC.2012.6176978

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. / Souri, Kamran; Chae, Youngcheol; Makinwa, Kofi.

2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers. 2012. p. 208-209 6176978 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

AU - Souri, Kamran

AU - Chae, Youngcheol

AU - Makinwa, Kofi

PY - 2012

Y1 - 2012

N2 - This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20x less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd-order ΔΣ conversion.

AB - This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20x less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd-order ΔΣ conversion.

UR - http://www.scopus.com/inward/record.url?scp=84860692339&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84860692339&partnerID=8YFLogxK

U2 - 10.1109/ISSCC.2012.6176978

DO - 10.1109/ISSCC.2012.6176978

M3 - Conference contribution

AN - SCOPUS:84860692339

SN - 9781467303736

T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

SP - 208

EP - 209

BT - 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers

T2 - 59th International Solid-State Circuits Conference, ISSCC 2012

Y2 - 19 February 2012 through 23 February 2012

ER -

Souri K, Chae Y, Makinwa K. A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers. 2012. p. 208-209. 6176978. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2012.6176978

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this