A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C

Kamran Souri, Youngcheol Chae, Kofi Makinwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

43 Citations (Scopus)

Abstract

This paper describes an energy-efficient CMOS temperature sensor intended for use in RFID tags. The sensor achieves an inaccuracy of ±0.15°C (3σ) over the military temperature range (-55 to 125°C) and dissipates only 27nJ/conversion: over 20x less than a previous sensor with comparable accuracy and resolution [2]. This energy efficiency is achieved by the use of an improved charge-balancing scheme and a zoom ADC that combines a 5b coarse SAR conversion with a 10b fine 2 nd-order ΔΣ conversion.

Original languageEnglish
Title of host publication2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers
Pages208-209
Number of pages2
DOIs
Publication statusPublished - 2012 May 11
Event59th International Solid-State Circuits Conference, ISSCC 2012 - San Francisco, CA, United States
Duration: 2012 Feb 192012 Feb 23

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume55
ISSN (Print)0193-6530

Other

Other59th International Solid-State Circuits Conference, ISSCC 2012
CountryUnited States
CitySan Francisco, CA
Period12/2/1912/2/23

Fingerprint

Temperature sensors
Sensors
Electric potential
Radio frequency identification (RFID)
Energy efficiency
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Souri, K., Chae, Y., & Makinwa, K. (2012). A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers (pp. 208-209). [6176978] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55). https://doi.org/10.1109/ISSCC.2012.6176978
Souri, Kamran ; Chae, Youngcheol ; Makinwa, Kofi. / A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers. 2012. pp. 208-209 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).
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Souri, K, Chae, Y & Makinwa, K 2012, A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. in 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers., 6176978, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 55, pp. 208-209, 59th International Solid-State Circuits Conference, ISSCC 2012, San Francisco, CA, United States, 12/2/19. https://doi.org/10.1109/ISSCC.2012.6176978

A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. / Souri, Kamran; Chae, Youngcheol; Makinwa, Kofi.

2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers. 2012. p. 208-209 6176978 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 55).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Souri K, Chae Y, Makinwa K. A CMOS temperature sensor with a voltage-calibrated inaccuracy of ±0.15°C (3σ) from -55 to 125°C. In 2012 IEEE International Solid-State Circuits Conference, ISSCC 2012 - Digest of Technical Papers. 2012. p. 208-209. 6176978. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). https://doi.org/10.1109/ISSCC.2012.6176978