A compact and low-profile GaN power amplifier using interposer-based MMIC technology

Dongsu Kim, Jong Min Yook, Sung Jin An, Sung Ryul Kim, Jong Gwan Yook, Jun Chul Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper presents a compact and low-profile GaN power amplifier using interposer-based monolithic microwave integrated circuit (iMMIC) technology. The power amplifier based on iMMIC technology consists of a fully embedded discrete GaN HEMT power device in a silicon interposer with a cavity and several passive components such as resistors, inductors, capacitors, and transmission lines for matching networks using silicon integrated passive device (IPD) process. By adopting known good die and semiconductor process, this technology can improve yield and provide compact, low-profile solution compared to conventional hybrid MIC technology. Also, the standard silicon process can drive this solution to cost down compared to high cost GaN MMIC process. The size of the power amplifier using iMMIC technology is only 1.6 mm × 2.8 mm × 0.12 mm. The measured result shows that the iMMIC power amplifier has a P3dB of more than 37.7 dBm with a drain efficiency of 53% at 8 GHz.

Original languageEnglish
Title of host publicationProceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages672-675
Number of pages4
ISBN (Electronic)9781479969944
DOIs
Publication statusPublished - 2014 Jan 30
Event2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014 - Singapore, Singapore
Duration: 2014 Dec 32014 Dec 5

Publication series

NameProceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014

Other

Other2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014
CountrySingapore
CitySingapore
Period14/12/314/12/5

Fingerprint

Monolithic microwave integrated circuits
Power amplifiers
Silicon
Resistors
Costs
Electric lines
Capacitors
Semiconductor materials

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, D., Yook, J. M., An, S. J., Kim, S. R., Yook, J. G., & Kim, J. C. (2014). A compact and low-profile GaN power amplifier using interposer-based MMIC technology. In Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014 (pp. 672-675). [7028416] (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EPTC.2014.7028416
Kim, Dongsu ; Yook, Jong Min ; An, Sung Jin ; Kim, Sung Ryul ; Yook, Jong Gwan ; Kim, Jun Chul. / A compact and low-profile GaN power amplifier using interposer-based MMIC technology. Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 672-675 (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014).
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abstract = "This paper presents a compact and low-profile GaN power amplifier using interposer-based monolithic microwave integrated circuit (iMMIC) technology. The power amplifier based on iMMIC technology consists of a fully embedded discrete GaN HEMT power device in a silicon interposer with a cavity and several passive components such as resistors, inductors, capacitors, and transmission lines for matching networks using silicon integrated passive device (IPD) process. By adopting known good die and semiconductor process, this technology can improve yield and provide compact, low-profile solution compared to conventional hybrid MIC technology. Also, the standard silicon process can drive this solution to cost down compared to high cost GaN MMIC process. The size of the power amplifier using iMMIC technology is only 1.6 mm × 2.8 mm × 0.12 mm. The measured result shows that the iMMIC power amplifier has a P3dB of more than 37.7 dBm with a drain efficiency of 53{\%} at 8 GHz.",
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Kim, D, Yook, JM, An, SJ, Kim, SR, Yook, JG & Kim, JC 2014, A compact and low-profile GaN power amplifier using interposer-based MMIC technology. in Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014., 7028416, Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014, Institute of Electrical and Electronics Engineers Inc., pp. 672-675, 2014 16th IEEE Electronics Packaging Technology Conference, EPTC 2014, Singapore, Singapore, 14/12/3. https://doi.org/10.1109/EPTC.2014.7028416

A compact and low-profile GaN power amplifier using interposer-based MMIC technology. / Kim, Dongsu; Yook, Jong Min; An, Sung Jin; Kim, Sung Ryul; Yook, Jong Gwan; Kim, Jun Chul.

Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 672-675 7028416 (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This paper presents a compact and low-profile GaN power amplifier using interposer-based monolithic microwave integrated circuit (iMMIC) technology. The power amplifier based on iMMIC technology consists of a fully embedded discrete GaN HEMT power device in a silicon interposer with a cavity and several passive components such as resistors, inductors, capacitors, and transmission lines for matching networks using silicon integrated passive device (IPD) process. By adopting known good die and semiconductor process, this technology can improve yield and provide compact, low-profile solution compared to conventional hybrid MIC technology. Also, the standard silicon process can drive this solution to cost down compared to high cost GaN MMIC process. The size of the power amplifier using iMMIC technology is only 1.6 mm × 2.8 mm × 0.12 mm. The measured result shows that the iMMIC power amplifier has a P3dB of more than 37.7 dBm with a drain efficiency of 53% at 8 GHz.

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Kim D, Yook JM, An SJ, Kim SR, Yook JG, Kim JC. A compact and low-profile GaN power amplifier using interposer-based MMIC technology. In Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 672-675. 7028416. (Proceedings of the 16th Electronics Packaging Technology Conference, EPTC 2014). https://doi.org/10.1109/EPTC.2014.7028416