A compact DC-30 GHz 0.13-μm CMOS SP4T switch

Byung Wook Min, Gabriel M. Rebeiz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This paper presents a DC-30 GHz single-polefour-throw (SP4T) CMOS switch using 0.13 μm CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250 X 180 (μm2), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB at 5 GHz and 24 GHz, respectively. The isolation is > 25 dB up to 30 GHz and achieved using a series-shunt switch configuration. The measured input PIdB and IIP3 of the SP4T switch are 9 dBm and 21 dBm, respectively. To our knowledge, this is the first ultra wideband CMOS SP4T switch and with a very small chip area.

Original languageEnglish
Title of host publication2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers
Pages148-151
Number of pages4
DOIs
Publication statusPublished - 2009 Jun 1
Event2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - San Diego, CA, United States
Duration: 2009 Jan 192009 Jan 21

Other

Other2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09
CountryUnited States
CitySan Diego, CA
Period09/1/1909/1/21

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Min, B. W., & Rebeiz, G. M. (2009). A compact DC-30 GHz 0.13-μm CMOS SP4T switch. In 2009 9th Topical Meeting on Silicon Monolithic Integrated Circuits in RF System, SiRF'09 - Digest of Papers (pp. 148-151). [4770521] https://doi.org/10.1109/SMIC.2009.4770521