A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

Edward Namkyu Cho, Yong Hyeon Shin, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔVTHQM) and the gate capacitance (Cg) degradation. First of all, ΔVTHQM induced by quantum mechanical (QM) effects is modeled. The Cg degradation is then modeled by introducing the inversion layer centroid. With ΔVTHQM and the Cg degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.

Original languageEnglish
Article number174507
JournalJournal of Applied Physics
Volume116
Issue number17
DOIs
Publication statusPublished - 2014 Nov 7

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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