An etching of a SiO2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23% lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10-12% higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.
|Number of pages||5|
|Publication status||Published - 2007 Jan|
Bibliographical noteFunding Information:
This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (Grant nos. R01-2003-000-10103-0 and R01-2006-000-11264-0) and FOI Corporation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering