A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas

Hyun Kyu Ryu, Yil Wook Kim, Kangtaek Lee, Chee Burm Shin, Chang Koo Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

An etching of a SiO2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23% lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10-12% higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.

Original languageEnglish
Pages (from-to)125-129
Number of pages5
JournalMicroelectronics Journal
Volume38
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1

Fingerprint

Fluorocarbons
fluorocarbons
high aspect ratio
Aspect ratio
electric contacts
Etching
etching
Plasmas
Gases
gases
Contacts (fluid mechanics)
Bending (forming)
etchants
Contact resistance
profiles
contact resistance
aspect ratio
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Ryu, Hyun Kyu ; Kim, Yil Wook ; Lee, Kangtaek ; Shin, Chee Burm ; Kim, Chang Koo. / A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas. In: Microelectronics Journal. 2007 ; Vol. 38, No. 1. pp. 125-129.
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abstract = "An etching of a SiO2 contact hole with a diameter of 0.19 μm and an aspect ratio of 13, using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas, was performed for a feasibility test of the use of unsaturated fluorocarbons (UFCs) as an alternative to perfluorocarbon (PFC) gases for a high aspect ratio contact hole etching. The etch profile of the contact hole obtained in the C4F6/Ar/O2/CH2F2 plasma was shown to have 23{\%} lower degree of bowing than that in the c-C4F8/Ar/O2/CH2F2 plasma. The Kelvin and chain contact resistances of the contact holes etched in the C4F6/Ar/O2/CH2F2 plasma were 10-12{\%} higher than those in the c-C4F8/Ar/O2/CH2F2 plasma, but they were within the device spec. The integration of device with 0.1 μm design rule using C4F6/Ar/O2/CH2F2 and c-C4F8/Ar/O2/CH2F2 plasmas during the contact hole etching was also conducted, and it was found that etch profiles, metal coverage, and bottom critical dimensions of the contact in the C4F6/Ar/O2/CH2F2 plasma were nearly identical to those in the c-C4F8/Ar/O2/CH2F2 plasma, suggesting that the use of C4F6 gas as an etchant gas for a high aspect ratio contact hole etching can be a good alternative to PFC gases.",
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A comparative study on a high aspect ratio contact hole etching in UFC- and PFC-containing plasmas. / Ryu, Hyun Kyu; Kim, Yil Wook; Lee, Kangtaek; Shin, Chee Burm; Kim, Chang Koo.

In: Microelectronics Journal, Vol. 38, No. 1, 01.01.2007, p. 125-129.

Research output: Contribution to journalArticle

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