A comprehensive model for low frequency noise in poly-Si thin-film transistors

I. K. Han, J. I. Lee, M. B. Lee, S. K. Chang, A. Chovet

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a comprehensive model for 1/f noise in poly-Si thin-film transistors in the linear regime where the current is controlled by the gate bias with a small fixed drain bias. For small gate biases the conduction and noise generation is dominated by thermionic emission at the grain boundary where as for large gate biases the conduction and noise generation is dominated by drift in the grain bulk region. The generation of the 1/f noise in the grain bulk can explained by the 'Unified Model' for crystalline Si-MOSFET's. However, the noise from grain boundary should be explained by number fluctuation models such as thermal activation model via barrier height modulation. An expression for the critical barrier height or gate bias, which severs these two regimes, is derived.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1489-1490
Number of pages2
DOIs
Publication statusPublished - 2005 Jun 30
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 2004 Jul 262004 Jul 30

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

OtherPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period04/7/2604/7/30

Fingerprint

transistors
low frequencies
thin films
grain boundaries
conduction
thermionic emission
field effect transistors
activation
modulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Han, I. K., Lee, J. I., Lee, M. B., Chang, S. K., & Chovet, A. (2005). A comprehensive model for low frequency noise in poly-Si thin-film transistors. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1489-1490). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994678
Han, I. K. ; Lee, J. I. ; Lee, M. B. ; Chang, S. K. ; Chovet, A. / A comprehensive model for low frequency noise in poly-Si thin-film transistors. PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. pp. 1489-1490 (AIP Conference Proceedings).
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Han, IK, Lee, JI, Lee, MB, Chang, SK & Chovet, A 2005, A comprehensive model for low frequency noise in poly-Si thin-film transistors. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 1489-1490, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 04/7/26. https://doi.org/10.1063/1.1994678

A comprehensive model for low frequency noise in poly-Si thin-film transistors. / Han, I. K.; Lee, J. I.; Lee, M. B.; Chang, S. K.; Chovet, A.

PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1489-1490 (AIP Conference Proceedings; Vol. 772).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Han IK, Lee JI, Lee MB, Chang SK, Chovet A. A comprehensive model for low frequency noise in poly-Si thin-film transistors. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. 2005. p. 1489-1490. (AIP Conference Proceedings). https://doi.org/10.1063/1.1994678