A die-selection method using search-space conditions for yield enhancement in 3D memory

Joohwan Lee, Kihyun Park, Sungho Kang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Three-dimensional (3D) memories using through-silicon vias (TSVs) as vertical buses across memory layers will likely be the first commercial application of 3D integrated circuit technology. The memory dies to stack together in a 3D memory are selected by a die-selection method. The conventional die-selection methods do not result in a highenough yields of 3D memories because 3D memories are typically composed of known-good-dies (KGDs), which are repaired using self-contained redundancies. In 3D memory, redundancy sharing between neighboring vertical memory dies using TSVs is an effective strategy for yield enhancement. With the redundancy sharing strategy, a known-bad-die (KBD) possibly becomes a KGD after bonding. In this paper, we propose a novel dieselection method using KBDs as well as KGDs for yield enhancement in 3D memory. The proposed die-selection method uses three search-space conditions, which can reduce the search space for selecting memory dies to manufacture 3D memories. Simulation results show that the proposed die-selection method can significantly improve the yield of 3D memories in various fault distributions.

Original languageEnglish
Pages (from-to)904-913
Number of pages10
JournalETRI Journal
Volume33
Issue number6
DOIs
Publication statusPublished - 2011 Dec

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Data storage equipment
Redundancy
Silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Electrical and Electronic Engineering

Cite this

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A die-selection method using search-space conditions for yield enhancement in 3D memory. / Lee, Joohwan; Park, Kihyun; Kang, Sungho.

In: ETRI Journal, Vol. 33, No. 6, 12.2011, p. 904-913.

Research output: Contribution to journalArticle

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