A dual-capture wide dynamic range CMOS image sensor using floating-diffusion capacitor

Dongsoo Kim, Youngcheol Chae, Jihyun Cho, Gunhee Han

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

A dual-capture wide dynamic range CMOS image sensor using an in-pixel floating-diffusion (FD) storage capacitor is proposed. The proposed structure uses the FD as a storage capacitor. The potential of the FD node is read out using a floating-gate capacitor without a contact metallization of the FD node to reduce the leakage. The proposed sensor was fabricated using a 0.35-μm CMOS process. The chip includes 320 × 240 pixels whose pitch is 5.6 μm and whose fill factor is 36%. The measurement results show 100-dB dynamic range, and the leakage at the non-metalized FD is reduced to about one-third of that of the conventional FD with the contact metallization.

Original languageEnglish
Pages (from-to)2590-2594
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume55
Issue number10
DOIs
Publication statusPublished - 2008 Oct 16

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Image sensors
Capacitors
Capacitor storage
Metallizing
Pixels
Sensors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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A dual-capture wide dynamic range CMOS image sensor using floating-diffusion capacitor. / Kim, Dongsoo; Chae, Youngcheol; Cho, Jihyun; Han, Gunhee.

In: IEEE Transactions on Electron Devices, Vol. 55, No. 10, 16.10.2008, p. 2590-2594.

Research output: Contribution to journalArticle

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