A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis

Beomjin Park, Jaesung Park, Jin Gyeong Son, Yong Jin Kim, Seong Uk Yu, Hyo Ju Park, Dong Hun Chae, Jinseok Byun, Gumhye Jeon, Sung Huh, Seoung Ki Lee, Artem Mishchenko, Seung Hyun, Tae Geol Lee, Sang Woo Han, Jong Hyun Ahn, Zonghoon Lee, Chanyong Hwang, Konstantin S. Novoselov, Kwang S. KimByung Hee Hong, Jin Kon Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures. (Graph Presented).

Original languageEnglish
Pages (from-to)8352-8360
Number of pages9
JournalACS Nano
Volume9
Issue number8
DOIs
Publication statusPublished - 2015 Aug 25

Fingerprint

Graphite
Graphene
graphene
Carbon
Metals
routes
insulators
Amorphous carbon
carbon
synthesis
Heterojunctions
metals
Polystyrenes
polystyrene
Quantum Hall effect
Acoustic impedance
Nanoelectronics
quantum Hall effect
Optical devices
electrical resistance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Park, B., Park, J., Son, J. G., Kim, Y. J., Yu, S. U., Park, H. J., ... Kim, J. K. (2015). A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis. ACS Nano, 9(8), 8352-8360. https://doi.org/10.1021/acsnano.5b03037
Park, Beomjin ; Park, Jaesung ; Son, Jin Gyeong ; Kim, Yong Jin ; Yu, Seong Uk ; Park, Hyo Ju ; Chae, Dong Hun ; Byun, Jinseok ; Jeon, Gumhye ; Huh, Sung ; Lee, Seoung Ki ; Mishchenko, Artem ; Hyun, Seung ; Lee, Tae Geol ; Han, Sang Woo ; Ahn, Jong Hyun ; Lee, Zonghoon ; Hwang, Chanyong ; Novoselov, Konstantin S. ; Kim, Kwang S. ; Hong, Byung Hee ; Kim, Jin Kon. / A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis. In: ACS Nano. 2015 ; Vol. 9, No. 8. pp. 8352-8360.
@article{2610d397e7054cef9f6830c0b3e476ca,
title = "A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis",
abstract = "Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures. (Graph Presented).",
author = "Beomjin Park and Jaesung Park and Son, {Jin Gyeong} and Kim, {Yong Jin} and Yu, {Seong Uk} and Park, {Hyo Ju} and Chae, {Dong Hun} and Jinseok Byun and Gumhye Jeon and Sung Huh and Lee, {Seoung Ki} and Artem Mishchenko and Seung Hyun and Lee, {Tae Geol} and Han, {Sang Woo} and Ahn, {Jong Hyun} and Zonghoon Lee and Chanyong Hwang and Novoselov, {Konstantin S.} and Kim, {Kwang S.} and Hong, {Byung Hee} and Kim, {Jin Kon}",
year = "2015",
month = "8",
day = "25",
doi = "10.1021/acsnano.5b03037",
language = "English",
volume = "9",
pages = "8352--8360",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "8",

}

Park, B, Park, J, Son, JG, Kim, YJ, Yu, SU, Park, HJ, Chae, DH, Byun, J, Jeon, G, Huh, S, Lee, SK, Mishchenko, A, Hyun, S, Lee, TG, Han, SW, Ahn, JH, Lee, Z, Hwang, C, Novoselov, KS, Kim, KS, Hong, BH & Kim, JK 2015, 'A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis', ACS Nano, vol. 9, no. 8, pp. 8352-8360. https://doi.org/10.1021/acsnano.5b03037

A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis. / Park, Beomjin; Park, Jaesung; Son, Jin Gyeong; Kim, Yong Jin; Yu, Seong Uk; Park, Hyo Ju; Chae, Dong Hun; Byun, Jinseok; Jeon, Gumhye; Huh, Sung; Lee, Seoung Ki; Mishchenko, Artem; Hyun, Seung; Lee, Tae Geol; Han, Sang Woo; Ahn, Jong Hyun; Lee, Zonghoon; Hwang, Chanyong; Novoselov, Konstantin S.; Kim, Kwang S.; Hong, Byung Hee; Kim, Jin Kon.

In: ACS Nano, Vol. 9, No. 8, 25.08.2015, p. 8352-8360.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A Facile Route for Patterned Growth of Metal-Insulator Carbon Lateral Junction through One-Pot Synthesis

AU - Park, Beomjin

AU - Park, Jaesung

AU - Son, Jin Gyeong

AU - Kim, Yong Jin

AU - Yu, Seong Uk

AU - Park, Hyo Ju

AU - Chae, Dong Hun

AU - Byun, Jinseok

AU - Jeon, Gumhye

AU - Huh, Sung

AU - Lee, Seoung Ki

AU - Mishchenko, Artem

AU - Hyun, Seung

AU - Lee, Tae Geol

AU - Han, Sang Woo

AU - Ahn, Jong Hyun

AU - Lee, Zonghoon

AU - Hwang, Chanyong

AU - Novoselov, Konstantin S.

AU - Kim, Kwang S.

AU - Hong, Byung Hee

AU - Kim, Jin Kon

PY - 2015/8/25

Y1 - 2015/8/25

N2 - Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures. (Graph Presented).

AB - Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures. (Graph Presented).

UR - http://www.scopus.com/inward/record.url?scp=84940121912&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940121912&partnerID=8YFLogxK

U2 - 10.1021/acsnano.5b03037

DO - 10.1021/acsnano.5b03037

M3 - Article

AN - SCOPUS:84940121912

VL - 9

SP - 8352

EP - 8360

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 8

ER -