A facile route for the fabrication of large-scale gate-all-around nanofluidic field-effect transistors with low leakage current

Sangwoo Shin, Beom Seok Kim, Jiwoon Song, Hwanseong Lee, Hyung Hee Cho

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Active modulation of ions and molecules via field-effect gating in nanofluidic channels is a crucial technology for various promising applications such as DNA sequencing, drug delivery, desalination, and energy conversion. Developing a rapid and facile fabrication method for ionic field-effect transistors (FET) over a large area may offer exciting opportunities for both fundamental research and innovative applications. Here, we report a rapid, cost-effective route for the fabrication of large-scale nanofluidic field-effect transistors using a simple, lithography-free two-step fabrication process that consists of sputtering and barrier-type anodization. A robust alumina gate dielectric layer, which is formed by anodizing sputtered aluminium, can be rapidly fabricated in the order of minutes. When anodizing aluminium, we employ a hemispherical counter electrode in order to give a uniform electric field that encompasses the whole sputtered aluminium layer which has high surface roughness. In consequence, a well-defined thin layer of alumina with perfect step coverage is formed on a highly rough aluminium surface. A gate-all-around nanofluidic FET with a leak-free gate dielectric exhibits outstanding gating performance despite a large channel size. The thin and robust anodized alumina gate dielectric plays a crucial role in achieving such excellent capacitive coupling. The combination of a gate-all-around structure with a leak-free gate dielectric over a large area could yield breakthroughs in areas ranging from biotechnology to energy and environmental applications.

Original languageEnglish
Pages (from-to)2568-2574
Number of pages7
JournalLab on a chip
Volume12
Issue number14
DOIs
Publication statusPublished - 2012 Jul 21

Fingerprint

Nanofluidics
Gate dielectrics
Field effect transistors
Aluminum
Leakage currents
Aluminum Oxide
Fabrication
Alumina
Anodic oxidation
Desalination
Biotechnology
Drug delivery
DNA Sequence Analysis
Energy conversion
Lithography
Sputtering
Electrodes
DNA
Surface roughness
Electric fields

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Biochemistry
  • Chemistry(all)
  • Biomedical Engineering

Cite this

Shin, Sangwoo ; Kim, Beom Seok ; Song, Jiwoon ; Lee, Hwanseong ; Cho, Hyung Hee. / A facile route for the fabrication of large-scale gate-all-around nanofluidic field-effect transistors with low leakage current. In: Lab on a chip. 2012 ; Vol. 12, No. 14. pp. 2568-2574.
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A facile route for the fabrication of large-scale gate-all-around nanofluidic field-effect transistors with low leakage current. / Shin, Sangwoo; Kim, Beom Seok; Song, Jiwoon; Lee, Hwanseong; Cho, Hyung Hee.

In: Lab on a chip, Vol. 12, No. 14, 21.07.2012, p. 2568-2574.

Research output: Contribution to journalArticle

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