A facile route to recover intrinsic graphene over large scale

Dong Wook Shin; Hyun Myoung Lee; Seong Man Yu; Kwang Soo Lim; Jae Hoon Jung; Min Kyu Kim; Sang Woo Kim; Jae Hee Han; Rodney S. Ruoff; Ji Beom Yoo

doi:10.1021/nn3017603

A facile route to recover intrinsic graphene over large scale

Dong Wook Shin, Hyun Myoung Lee, Seong Man Yu, Kwang Soo Lim, Jae Hoon Jung, Min Kyu Kim, Sang Woo Kim, Jae Hee Han, Rodney S. Ruoff, Ji Beom Yoo

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H ₂O/O ₂ redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H ₂O/O ₂ redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H ₂O/O ₂ redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

Original language	English
Pages (from-to)	7781-7788
Number of pages	8
Journal	ACS Nano
Volume	6
Issue number	9
DOIs	https://doi.org/10.1021/nn3017603
Publication status	Published - 2012 Sept 25

All Science Journal Classification (ASJC) codes

Materials Science(all)
Engineering(all)
Physics and Astronomy(all)

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10.1021/nn3017603

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title = "A facile route to recover intrinsic graphene over large scale",

abstract = "The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H 2O/O 2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H 2O/O 2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H 2O/O 2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.",

author = "Shin, {Dong Wook} and Lee, {Hyun Myoung} and Yu, {Seong Man} and Lim, {Kwang Soo} and Jung, {Jae Hoon} and Kim, {Min Kyu} and Kim, {Sang Woo} and Han, {Jae Hee} and Ruoff, {Rodney S.} and Yoo, {Ji Beom}",

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doi = "10.1021/nn3017603",

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T1 - A facile route to recover intrinsic graphene over large scale

AU - Shin, Dong Wook

AU - Lee, Hyun Myoung

AU - Yu, Seong Man

AU - Lim, Kwang Soo

AU - Jung, Jae Hoon

AU - Kim, Min Kyu

AU - Kim, Sang Woo

AU - Han, Jae Hee

AU - Ruoff, Rodney S.

AU - Yoo, Ji Beom

PY - 2012/9/25

Y1 - 2012/9/25

N2 - The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H 2O/O 2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H 2O/O 2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H 2O/O 2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

AB - The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H 2O/O 2 redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H 2O/O 2 redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H 2O/O 2 redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.

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A facile route to recover intrinsic graphene over large scale

Abstract

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