A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications

Hyoung Seok Oh, Taeksang Song, Sang Hyun Baek, Euisik Yoon, Choong Ki Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10dBm at 2.4GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not. only the output power stage, but the driver stage needs to be co-optimized for low power Operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18μm CMOS technology, achieves a power added efficiency (PAE) of 43% while delivering an output power of 9.5dBm with a drain efficiency(DE) of 48.5% at IV supply voltage.

Original languageEnglish
Title of host publicationProceedings - 2006 IEEE Radio and Wireless Symposium
Pages235-238
Number of pages4
Publication statusPublished - 2006 Dec 1
Event2006 IEEE Radio and Wireless Symposium - San Diego, CA, United States
Duration: 2006 Jan 172006 Jan 19

Publication series

NameProceedings - 2006 IEEE Radio and Wireless Symposium
Volume2006

Conference

Conference2006 IEEE Radio and Wireless Symposium
CountryUnited States
CitySan Diego, CA
Period06/1/1706/1/19

Fingerprint

Power amplifiers
Wireless sensor networks
Sensor networks
Transmitters
Electric power utilization
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Oh, H. S., Song, T., Baek, S. H., Yoon, E., & Kim, C. K. (2006). A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications. In Proceedings - 2006 IEEE Radio and Wireless Symposium (pp. 235-238). [1615138] (Proceedings - 2006 IEEE Radio and Wireless Symposium; Vol. 2006).
Oh, Hyoung Seok ; Song, Taeksang ; Baek, Sang Hyun ; Yoon, Euisik ; Kim, Choong Ki. / A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications. Proceedings - 2006 IEEE Radio and Wireless Symposium. 2006. pp. 235-238 (Proceedings - 2006 IEEE Radio and Wireless Symposium).
@inproceedings{9e47f5a97c4d4261b7554a8ec1e82d3b,
title = "A fully integrated 1V, +9.5dBm, 43{\%}-PAE injection-locked class-E power amplifier for wireless sensor network applications",
abstract = "In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10dBm at 2.4GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not. only the output power stage, but the driver stage needs to be co-optimized for low power Operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18μm CMOS technology, achieves a power added efficiency (PAE) of 43{\%} while delivering an output power of 9.5dBm with a drain efficiency(DE) of 48.5{\%} at IV supply voltage.",
author = "Oh, {Hyoung Seok} and Taeksang Song and Baek, {Sang Hyun} and Euisik Yoon and Kim, {Choong Ki}",
year = "2006",
month = "12",
day = "1",
language = "English",
isbn = "0780394127",
series = "Proceedings - 2006 IEEE Radio and Wireless Symposium",
pages = "235--238",
booktitle = "Proceedings - 2006 IEEE Radio and Wireless Symposium",

}

Oh, HS, Song, T, Baek, SH, Yoon, E & Kim, CK 2006, A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications. in Proceedings - 2006 IEEE Radio and Wireless Symposium., 1615138, Proceedings - 2006 IEEE Radio and Wireless Symposium, vol. 2006, pp. 235-238, 2006 IEEE Radio and Wireless Symposium, San Diego, CA, United States, 06/1/17.

A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications. / Oh, Hyoung Seok; Song, Taeksang; Baek, Sang Hyun; Yoon, Euisik; Kim, Choong Ki.

Proceedings - 2006 IEEE Radio and Wireless Symposium. 2006. p. 235-238 1615138 (Proceedings - 2006 IEEE Radio and Wireless Symposium; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications

AU - Oh, Hyoung Seok

AU - Song, Taeksang

AU - Baek, Sang Hyun

AU - Yoon, Euisik

AU - Kim, Choong Ki

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10dBm at 2.4GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not. only the output power stage, but the driver stage needs to be co-optimized for low power Operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18μm CMOS technology, achieves a power added efficiency (PAE) of 43% while delivering an output power of 9.5dBm with a drain efficiency(DE) of 48.5% at IV supply voltage.

AB - In most short-range wireless sensor network applications, the maximum transmit-power is typically about 10dBm at 2.4GHz ISM band. In such a low transmit-power level, the driving power and DC power consumption in the previous stage are no more negligible compared to the transmitted signal power. So, to increase the overall transmitter efficiency, not. only the output power stage, but the driver stage needs to be co-optimized for low power Operation. In this paper, we present an injection-locked Class-E power amplifier (Class-E ILPA) suitable for the low transmit-power sensor network applications. The proposed power amplifier, which is fully integrated in 0.18μm CMOS technology, achieves a power added efficiency (PAE) of 43% while delivering an output power of 9.5dBm with a drain efficiency(DE) of 48.5% at IV supply voltage.

UR - http://www.scopus.com/inward/record.url?scp=33846379556&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846379556&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33846379556

SN - 0780394127

SN - 9780780394124

T3 - Proceedings - 2006 IEEE Radio and Wireless Symposium

SP - 235

EP - 238

BT - Proceedings - 2006 IEEE Radio and Wireless Symposium

ER -

Oh HS, Song T, Baek SH, Yoon E, Kim CK. A fully integrated 1V, +9.5dBm, 43%-PAE injection-locked class-E power amplifier for wireless sensor network applications. In Proceedings - 2006 IEEE Radio and Wireless Symposium. 2006. p. 235-238. 1615138. (Proceedings - 2006 IEEE Radio and Wireless Symposium).