A HfO2 thin film resistive switch based on conducting atomic force microscopy

J. Y. Son, D. Y. Kim, H. Kim, W. J. Maeng, Y. S. Shin, Y. H. Shin

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.

Original languageEnglish
Pages (from-to)H311-H313
JournalElectrochemical and Solid-State Letters
Volume14
Issue number8
DOIs
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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