A HfO2 thin film resistive switch based on conducting atomic force microscopy

J. Y. Son, D. Y. Kim, Hyungjun Kim, W. J. Maeng, Y. S. Shin, Y. H. Shin

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number8
DOIs
Publication statusPublished - 2011 Jun 22

Fingerprint

random access memory
Atomic force microscopy
switches
Switches
atomic force microscopy
Data storage equipment
conduction
Thin films
thin films
Metallizing
Anodes
Cathodes
anodes
cathodes
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Son, J. Y. ; Kim, D. Y. ; Kim, Hyungjun ; Maeng, W. J. ; Shin, Y. S. ; Shin, Y. H. / A HfO2 thin film resistive switch based on conducting atomic force microscopy. In: Electrochemical and Solid-State Letters. 2011 ; Vol. 14, No. 8.
@article{3aaf420992e7425098e0bf330bda2230,
title = "A HfO2 thin film resistive switch based on conducting atomic force microscopy",
abstract = "A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.",
author = "Son, {J. Y.} and Kim, {D. Y.} and Hyungjun Kim and Maeng, {W. J.} and Shin, {Y. S.} and Shin, {Y. H.}",
year = "2011",
month = "6",
day = "22",
doi = "10.1149/1.3574526",
language = "English",
volume = "14",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

A HfO2 thin film resistive switch based on conducting atomic force microscopy. / Son, J. Y.; Kim, D. Y.; Kim, Hyungjun; Maeng, W. J.; Shin, Y. S.; Shin, Y. H.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 8, 22.06.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A HfO2 thin film resistive switch based on conducting atomic force microscopy

AU - Son, J. Y.

AU - Kim, D. Y.

AU - Kim, Hyungjun

AU - Maeng, W. J.

AU - Shin, Y. S.

AU - Shin, Y. H.

PY - 2011/6/22

Y1 - 2011/6/22

N2 - A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.

AB - A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.

UR - http://www.scopus.com/inward/record.url?scp=79959202952&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959202952&partnerID=8YFLogxK

U2 - 10.1149/1.3574526

DO - 10.1149/1.3574526

M3 - Article

VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 8

ER -