A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

Sung Jin An, Jong Min Yook, Tae Woong Yoon, Hyeok Kim, Jun Chul Kim, Jong Gwan Yook, Youngcheol Park, Dongsu Kim

Research output: Contribution to journalArticle

Abstract

This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

Original languageEnglish
Pages (from-to)2178-2182
Number of pages5
JournalMicrowave and Optical Technology Letters
Volume58
Issue number9
DOIs
Publication statusPublished - 2016 Sep 1

Fingerprint

harmonic control
power amplifiers
Power amplifiers
Monolithic microwave integrated circuits
output
Silicon
waveforms
Networks (circuits)
augmentation
Electric potential
electric potential
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Jin An, Sung ; Min Yook, Jong ; Woong Yoon, Tae ; Kim, Hyeok ; Chul Kim, Jun ; Yook, Jong Gwan ; Park, Youngcheol ; Kim, Dongsu. / A high-efficiency gan power amplifier with harmonic control based on Si-IPDS. In: Microwave and Optical Technology Letters. 2016 ; Vol. 58, No. 9. pp. 2178-2182.
@article{aa38412ec8b044678f189d1a3b85305a,
title = "A high-efficiency gan power amplifier with harmonic control based on Si-IPDS",
abstract = "This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8{\%} at 2.4 GHz.",
author = "{Jin An}, Sung and {Min Yook}, Jong and {Woong Yoon}, Tae and Hyeok Kim and {Chul Kim}, Jun and Yook, {Jong Gwan} and Youngcheol Park and Dongsu Kim",
year = "2016",
month = "9",
day = "1",
doi = "10.1002/mop.30003",
language = "English",
volume = "58",
pages = "2178--2182",
journal = "Microwave and Optical Technology Letters",
issn = "0895-2477",
publisher = "John Wiley and Sons Inc.",
number = "9",

}

Jin An, S, Min Yook, J, Woong Yoon, T, Kim, H, Chul Kim, J, Yook, JG, Park, Y & Kim, D 2016, 'A high-efficiency gan power amplifier with harmonic control based on Si-IPDS', Microwave and Optical Technology Letters, vol. 58, no. 9, pp. 2178-2182. https://doi.org/10.1002/mop.30003

A high-efficiency gan power amplifier with harmonic control based on Si-IPDS. / Jin An, Sung; Min Yook, Jong; Woong Yoon, Tae; Kim, Hyeok; Chul Kim, Jun; Yook, Jong Gwan; Park, Youngcheol; Kim, Dongsu.

In: Microwave and Optical Technology Letters, Vol. 58, No. 9, 01.09.2016, p. 2178-2182.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A high-efficiency gan power amplifier with harmonic control based on Si-IPDS

AU - Jin An, Sung

AU - Min Yook, Jong

AU - Woong Yoon, Tae

AU - Kim, Hyeok

AU - Chul Kim, Jun

AU - Yook, Jong Gwan

AU - Park, Youngcheol

AU - Kim, Dongsu

PY - 2016/9/1

Y1 - 2016/9/1

N2 - This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

AB - This article presents a high-efficiency power amplifier using quasi-MMIC technology. The efficiency enhancement is achieved based upon the second or third harmonic control provided by input and output matching networks. The gate-source voltage waveform control with Class-F operation achieves significant efficiency improvements. The quasi-MMIC technology using silicon-integrated passive devices (Si-IPDs) can drive the solution to provide compact size at 2.4 GHz. The output matching network for Class-F operation is described, using lumped elements to reduce circuit size. The dimensions of the fabricated power amplifier are 3.6 mm × 7.6 mm, with a thickness of 0.15 mm. The measured results show that the power amplifier has a small signal gain of about 10 dB and a Psat of 41.8 dBm with a maximum drain efficiency of 70.8% at 2.4 GHz.

UR - http://www.scopus.com/inward/record.url?scp=84978945317&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978945317&partnerID=8YFLogxK

U2 - 10.1002/mop.30003

DO - 10.1002/mop.30003

M3 - Article

VL - 58

SP - 2178

EP - 2182

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

IS - 9

ER -