A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

Hyung Kew Lee; Jun Bo Yoon; Euisik Yoon; Sang Baek Ju; Yoon Joong Yong; Wook Lee; Sang Gook Kim

doi:10.1109/16.772496

A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

Hyung Kew Lee, Jun Bo Yoon, Euisik Yoon, Sang Baek Ju, Yoon Joong Yong, Wook Lee, Sang Gook Kim

Yonsei Advanced Science Institute

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 10⁸ cm√Hz/W.

Original language	English
Pages (from-to)	1489-1491
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	7
DOIs	https://doi.org/10.1109/16.772496
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/16.772496

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abstract = "A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.",

author = "Lee, {Hyung Kew} and Yoon, {Jun Bo} and Euisik Yoon and Ju, {Sang Baek} and Yong, {Yoon Joong} and Wook Lee and Kim, {Sang Gook}",

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AU - Lee, Hyung Kew

AU - Yoon, Jun Bo

AU - Yoon, Euisik

AU - Ju, Sang Baek

AU - Yong, Yoon Joong

AU - Lee, Wook

AU - Kim, Sang Gook

PY - 1999

Y1 - 1999

N2 - A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.

AB - A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.

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JF - IEEE Transactions on Electron Devices

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A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

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