Abstract
A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.
| Original language | English |
|---|---|
| Pages (from-to) | 1489-1491 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 46 |
| Issue number | 7 |
| Publication status | Published - 1999 Jul 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Lee, H. K., Yoon, J. B., Yoon, E., Ju, S. B., Yong, Y. J., Lee, W., & Kim, S. G. (1999). A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures. IEEE Transactions on Electron Devices, 46(7), 1489-1491.