A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

Hyung Kew Lee; Jun Bo Yoon; Euisik Yoon; Sang Baek Ju; Yoon Joong Yong; Wook Lee; Sang Gook Kim

doi:10.1109/16.772496

A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

Hyung Kew Lee, Jun Bo Yoon, Euisik Yoon, Sang Baek Ju, Yoon Joong Yong, Wook Lee, Sang Gook Kim

Yonsei Advanced Science Institute

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 10⁸ cm√Hz/W.

Original language	English
Pages (from-to)	1489-1491
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	46
Issue number	7
DOIs	https://doi.org/10.1109/16.772496
Publication status	Published - 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{02d2a1b060fd4f37b75e24520b15dab2,

title = "A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures",

abstract = "A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.",

author = "Lee, {Hyung Kew} and Yoon, {Jun Bo} and Euisik Yoon and Ju, {Sang Baek} and Yong, {Yoon Joong} and Wook Lee and Kim, {Sang Gook}",

year = "1999",

doi = "10.1109/16.772496",

language = "English",

volume = "46",

pages = "1489--1491",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - A high fill-factor infrared bolometer using micromachined multilevel electrothermal structures

AU - Lee, Hyung Kew

AU - Yoon, Jun Bo

AU - Yoon, Euisik

AU - Ju, Sang Baek

AU - Yong, Yoon Joong

AU - Lee, Wook

AU - Kim, Sang Gook

PY - 1999

Y1 - 1999

N2 - A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.

AB - A high fill-factor uncooled infrared (IR) bolometer has been fabricated by using thin-film titanium resistors sandwiched in a surface-micromachined silicon oxinitride membrane (50 μm × 50 μm). This bolometer is realized in multilevel electrothermal structures with a fill-factor over 92%. From the multilevel structure, thermal isolation can be independently optimized without sacrificing IR absorbing area. Initial measurements show a thermal time constant of 12 ms, a responsivity of 1600 V/W, and a detectivity (D*) of 5 × 108 cm√Hz/W.

UR - http://www.scopus.com/inward/record.url?scp=0032652153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032652153&partnerID=8YFLogxK

U2 - 10.1109/16.772496

DO - 10.1109/16.772496

M3 - Article

AN - SCOPUS:0032652153

VL - 46

SP - 1489

EP - 1491

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

ER -