A Highly Digital 2210μm2Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare; Youngcheol Chae; Kofi A.A. Makinwa

doi:10.1109/ISSCC42613.2021.9365995

A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare, Youngcheol Chae, Kofi A.A. Makinwa

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).

Original language	English
Title of host publication	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	76-78
Number of pages	3
ISBN (Electronic)	9781728195490
DOIs	https://doi.org/10.1109/ISSCC42613.2021.9365995
Publication status	Published - 2021 Feb 13
Event	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - San Francisco, United States Duration: 2021 Feb 13 → 2021 Feb 22

Publication series

Name	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume	64
ISSN (Print)	0193-6530

Conference

Conference	2021 IEEE International Solid-State Circuits Conference, ISSCC 2021
Country/Territory	United States
City	San Francisco
Period	21/2/13 → 21/2/22

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISSCC42613.2021.9365995

Cite this

Angevare, J. A., Chae, Y., & Makinwa, K. A. A. (2021). A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers (pp. 76-78). [9365995] (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC42613.2021.9365995

Angevare, Jan A. ; Chae, Youngcheol ; Makinwa, Kofi A.A. / A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2021. pp. 76-78 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).

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abstract = "Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).",

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Angevare, JA, Chae, Y & Makinwa, KAA 2021, A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. in 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers., 9365995, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, vol. 64, Institute of Electrical and Electronics Engineers Inc., pp. 76-78, 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021, San Francisco, United States, 21/2/13. https://doi.org/10.1109/ISSCC42613.2021.9365995

A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. / Angevare, Jan A.; Chae, Youngcheol; Makinwa, Kofi A.A.

2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc., 2021. p. 76-78 9365995 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Vol. 64).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Angevare JA, Chae Y, Makinwa KAA. A Highly Digital 2210μm²Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS. In 2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers. Institute of Electrical and Electronics Engineers Inc. 2021. p. 76-78. 9365995. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC42613.2021.9365995