A Highly Digital 2210μm2Resistor-Based Temperature Sensor with a 1-Point Trimmed Inaccuracy of ± 1.3 ° C (3 σ) from -55 ° C to 125 ° C in 65nm CMOS

Jan A. Angevare, Youngcheol Chae, Kofi A.A. Makinwa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Microprocessors and SoCs employ multiple temperature sensors to prevent overheating and ensure reliable operation. Such sensors should be small (<10,000μm2) to monitor local hot-spots in dense layouts. They should also be moderately accurate (1°C) up to high temperatures (≥125°C), so that the system throttling temperature can be set as close as possible to the maximum allowable die temperature. Furthermore, they should be fast (1kS/s) and consume low power (tens of μW).

Original languageEnglish
Title of host publication2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages76-78
Number of pages3
ISBN (Electronic)9781728195490
DOIs
Publication statusPublished - 2021 Feb 13
Event2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - San Francisco, United States
Duration: 2021 Feb 132021 Feb 22

Publication series

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Volume64
ISSN (Print)0193-6530

Conference

Conference2021 IEEE International Solid-State Circuits Conference, ISSCC 2021
CountryUnited States
CitySan Francisco
Period21/2/1321/2/22

Bibliographical note

Publisher Copyright:
© 2021 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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