A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals

T. I. Shin; H. J. Lee; W. Y. Song; Sang Woo Kim; M. H. Park; C. W. Yang; D. H. Yoon

doi:10.1088/0957-4484/18/34/345305

A homojunction of single-crystalline β-Ga₂O₃ nanowires and nanocrystals

T. I. Shin, H. J. Lee, W. Y. Song, Sang Woo Kim, M. H. Park, C. W. Yang, D. H. Yoon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A homojunction of single-crystalline β-Ga₂O₃ nanowires and nanocrystals was realized. Ga₂O₃ nanowires were synthesized at about 850-950°C using a mixture of Ga₂O ₃ and graphite powder with vapor phase epitaxy. It was found that the β-Ga₂O₃ nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga₂O₃ nanocrystals follows the growth direction of the main β-Ga₂O₃ nanowires. The distance between neighboring atoms in β-Ga₂O₃ nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga₂O ₃.

Original language	English
Article number	345305
Journal	Nanotechnology
Volume	18
Issue number	34
DOIs	https://doi.org/10.1088/0957-4484/18/34/345305
Publication status	Published - 2007 Aug 29

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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@article{78816adacad54f87869dae9bc48838df,

title = "A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals",

abstract = "A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.",

author = "Shin, {T. I.} and Lee, {H. J.} and Song, {W. Y.} and Kim, {Sang Woo} and Park, {M. H.} and Yang, {C. W.} and Yoon, {D. H.}",

year = "2007",

month = aug,

day = "29",

doi = "10.1088/0957-4484/18/34/345305",

language = "English",

volume = "18",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "34",

}

TY - JOUR

T1 - A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals

AU - Shin, T. I.

AU - Lee, H. J.

AU - Song, W. Y.

AU - Kim, Sang Woo

AU - Park, M. H.

AU - Yang, C. W.

AU - Yoon, D. H.

PY - 2007/8/29

Y1 - 2007/8/29

N2 - A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.

AB - A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.

UR - http://www.scopus.com/inward/record.url?scp=34547784032&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547784032&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/18/34/345305

DO - 10.1088/0957-4484/18/34/345305

M3 - Article

AN - SCOPUS:34547784032

SN - 0957-4484

VL - 18

JO - Nanotechnology

JF - Nanotechnology

IS - 34

M1 - 345305

ER -

A homojunction of single-crystalline β-Ga₂O₃ nanowires and nanocrystals

Abstract

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