A homojunction of single-crystalline β-Ga2O3 nanowires and nanocrystals was realized. Ga2O3 nanowires were synthesized at about 850-950°C using a mixture of Ga2O 3 and graphite powder with vapor phase epitaxy. It was found that the β-Ga2O3 nanocrystals form a single unit with the nanowires and are part of the same single crystal with a perfect lattice. Growth of β-Ga2O3 nanocrystals follows the growth direction of the main β-Ga2O3 nanowires. The distance between neighboring atoms in β-Ga2O3 nanowires was 0.522 nm, which is similar to the theoretical value for bulk β-Ga2O 3.
|Publication status||Published - 2007 Aug 29|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
- Electrical and Electronic Engineering