This paper reports on the design and fabrication of a hermetic-compatible wafer-scale package for microwave and millimeter-wave devices. Coplanar waveguide (CPW) lines on a high-resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric inter-layer for CPW feed-throughs underneath the gold sealing ring. A 130-μm-high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF devices. The designed feed-through has an insertion loss of 0.05-0.26 dB at dc-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic resonance and leakage of the package. The whole packaged CPW line has a measured insertion loss of 0.2-0.7 dB and return loss of <-20 dB at dc-110 GHz.
|Number of pages||7|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - 2006 Feb|
Bibliographical noteFunding Information:
Manuscript received July 17, 2005; revised October 13, 2005. This work was supported by the U.S. Army Research Laboratories under the Collaborative Technology Agreement.
The authors acknowledge the support of E. Adler and E. Viveiros, both with the U.S. Army Research Laboratories, Adelphi, MD. The authors also thank Dr. Y. Lee, Dr. J. Chae, S. Lee, and Dr. K. Entesari, all with The University of Michigan at Ann Arbor, for help in the fabrication. The authors further thank J. Chee and Dr. X. Gong, both with Purdue University, West Lafayette, IN, for help with measurements.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering