A low-loss silicon-on-silicon DC-110-GHz resonance-free package

Byung Wook Min, Gabriel M. Rebeiz

Research output: Contribution to journalArticle

23 Citations (Scopus)


This paper reports on the design and fabrication of a hermetic-compatible wafer-scale package for microwave and millimeter-wave devices. Coplanar waveguide (CPW) lines on a high-resistivity silicon wafer are covered with another silicon wafer using gold-to-gold thermo-compression bonding. Oxide is used as a dielectric inter-layer for CPW feed-throughs underneath the gold sealing ring. A 130-μm-high cavity is etched in the cap wafer to remove an impact of capping wafer on CPW lines or RF devices. The designed feed-through has an insertion loss of 0.05-0.26 dB at dc-110 GHz with a return loss of < -20 dB (per transition). The gold sealing ring is connected to the CPW ground to eliminate any parasitic resonance and leakage of the package. The whole packaged CPW line has a measured insertion loss of 0.2-0.7 dB and return loss of <-20 dB at dc-110 GHz.

Original languageEnglish
Pages (from-to)710-716
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Issue number2
Publication statusPublished - 2006 Feb

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A low-loss silicon-on-silicon DC-110-GHz resonance-free package'. Together they form a unique fingerprint.

  • Cite this