A Low-Power 28-Gb/s PAM-4MZM Driver with Level Pre-Distortion

Minkyu Kim; Dae Hyun Kwon; Dae Won Rho; Woo Young Choi

doi:10.1109/TCSII.2020.3020128

A Low-Power 28-Gb/s PAM-4MZM Driver with Level Pre-Distortion

Minkyu Kim, Dae Hyun Kwon, Dae Won Rho, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We present a PAM-4 optical modulator driver for Mach-Zehnder modulator (MZM), having the level pre-distortion functionality so that the ratio of level mismatch (RLM) can be optimized. The driver employs a newly proposed PAM-4 stacked source-series terminated (SST) structure with impedance control so that it can provide high output voltage swing with low power consumption. A prototype chip including data generators and serializers is fabricated in 28-nm CMOS technology with 0.016 mm2 active chip area. With this, 28-Gb/s operation is achieved with 2.4 V differential output swing and 3.14 pJ/bit energy efficiency. It is experimentally demonstrated that our circuit can achieve larger than 95% RLM for a commercial LiNbO3 MZM PAM-4 modulation.

Original language	English
Article number	9179707
Pages (from-to)	908-912
Number of pages	5
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	68
Issue number	3
DOIs	https://doi.org/10.1109/TCSII.2020.3020128
Publication status	Published - 2021 Mar

Bibliographical note

Publisher Copyright:
© 2004-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TCSII.2020.3020128

Cite this

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title = "A Low-Power 28-Gb/s PAM-4MZM Driver with Level Pre-Distortion",

abstract = "We present a PAM-4 optical modulator driver for Mach-Zehnder modulator (MZM), having the level pre-distortion functionality so that the ratio of level mismatch (RLM) can be optimized. The driver employs a newly proposed PAM-4 stacked source-series terminated (SST) structure with impedance control so that it can provide high output voltage swing with low power consumption. A prototype chip including data generators and serializers is fabricated in 28-nm CMOS technology with 0.016 mm2 active chip area. With this, 28-Gb/s operation is achieved with 2.4 V differential output swing and 3.14 pJ/bit energy efficiency. It is experimentally demonstrated that our circuit can achieve larger than 95% RLM for a commercial LiNbO3 MZM PAM-4 modulation. ",

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PY - 2021/3

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A Low-Power 28-Gb/s PAM-4MZM Driver with Level Pre-Distortion

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

UN SDGs

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