A Low-Power 40-Gb/s Pre-Emphasis PAM-4 Transmitter with Toggling Serializers

Dae Hyun Kwon; Minkyu Kim; Sung Geun Kim; Woo Young Choi

doi:10.1109/TCSII.2019.2922040

A Low-Power 40-Gb/s Pre-Emphasis PAM-4 Transmitter with Toggling Serializers

Dae Hyun Kwon, Minkyu Kim, Sung Geun Kim, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We demonstrate a 40-Gb/s PAM-4 transmitter having 2-tap pre-emphasis, whose power consumption is significantly reduced by the use of toggling serializers. In addition, a new type of PAM-4 source-series terminated driver is proposed, which enables an easy control of pre-emphasis gain while maintaining impedance matching. A prototype 40-Gb/s PAM-4 transmitter containing these circuit ideas are successfully realized in 28-nm CMOS technology. It occupies 0.006 mm² and achieves energy efficiencies of 1.2 pJ/bit for 40-Gb/s operation without any pre-emphasis, and 1.68 pJ/bit with 9.54 dB pre-emphasis gain.

Original language	English
Article number	8734109
Pages (from-to)	400-434
Number of pages	35
Journal	IEEE Transactions on Circuits and Systems II: Express Briefs
Volume	67
Issue number	3
DOIs	https://doi.org/10.1109/TCSII.2019.2922040
Publication status	Published - 2020 Mar

Bibliographical note

Funding Information:
Manuscript received April 17, 2019; accepted June 7, 2019. Date of publication June 10, 2019; date of current version March 4, 2020. This work was supported in part by the Samsung Electronics, Materials and Parts Technology Research and Development Program funded by the Korean Ministry of Trade, Industry and Energy under Project 10065666, and in part by the Graduate School of Yonsei University Research Scholarship Grants. This brief was recommended by Associate Editor W. Namgoong. (Corresponding author: Woo-Young Choi.) D.-H. Kwon, M. Kim, and W.-Y. Choi are with the High-Speed Circuits and Systems Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: wchoi@yonsei.ac.kr).

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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title = "A Low-Power 40-Gb/s Pre-Emphasis PAM-4 Transmitter with Toggling Serializers",

abstract = "We demonstrate a 40-Gb/s PAM-4 transmitter having 2-tap pre-emphasis, whose power consumption is significantly reduced by the use of toggling serializers. In addition, a new type of PAM-4 source-series terminated driver is proposed, which enables an easy control of pre-emphasis gain while maintaining impedance matching. A prototype 40-Gb/s PAM-4 transmitter containing these circuit ideas are successfully realized in 28-nm CMOS technology. It occupies 0.006 mm2 and achieves energy efficiencies of 1.2 pJ/bit for 40-Gb/s operation without any pre-emphasis, and 1.68 pJ/bit with 9.54 dB pre-emphasis gain.",

author = "Kwon, {Dae Hyun} and Minkyu Kim and Kim, {Sung Geun} and Choi, {Woo Young}",

note = "Funding Information: Manuscript received April 17, 2019; accepted June 7, 2019. Date of publication June 10, 2019; date of current version March 4, 2020. This work was supported in part by the Samsung Electronics, Materials and Parts Technology Research and Development Program funded by the Korean Ministry of Trade, Industry and Energy under Project 10065666, and in part by the Graduate School of Yonsei University Research Scholarship Grants. This brief was recommended by Associate Editor W. Namgoong. (Corresponding author: Woo-Young Choi.) D.-H. Kwon, M. Kim, and W.-Y. Choi are with the High-Speed Circuits and Systems Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: wchoi@yonsei.ac.kr).",

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N1 - Funding Information: Manuscript received April 17, 2019; accepted June 7, 2019. Date of publication June 10, 2019; date of current version March 4, 2020. This work was supported in part by the Samsung Electronics, Materials and Parts Technology Research and Development Program funded by the Korean Ministry of Trade, Industry and Energy under Project 10065666, and in part by the Graduate School of Yonsei University Research Scholarship Grants. This brief was recommended by Associate Editor W. Namgoong. (Corresponding author: Woo-Young Choi.) D.-H. Kwon, M. Kim, and W.-Y. Choi are with the High-Speed Circuits and Systems Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, South Korea (e-mail: wchoi@yonsei.ac.kr).

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