A low voltage charge pump with high pumping efficiency is proposed in this paper. To get high pumping efficiency, the proposed circuit uses 2 branches cross coupled structure. To eliminate the body effect and threshold voltage drops, PMOS transistors are used as Charge Transfer Switch (CTS). The inverters below and above the CTS PMOS for controlling the gate of CTS PMOS properly. Undesired charge transfer flows higher voltage node voltage to lower voltage node is removed as the NMOS transistor and PMOS transistor below and above the CTS PMOS turn off during the clock transition. Furthermore, the time when those NMOS transistor and PMOS transistor are both off is short and due to the cross coupled wiring, the fast gate control would be able to made by present and previous stage. So that the cross coupled CTS charge pump has higher pumping efficiency than conventional circuits. The simulation results show that the proposed circuit's performance is better than other circuits.
|Title of host publication||Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Number of pages||5|
|Publication status||Published - 2019 Feb 22|
|Event||2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of|
Duration: 2018 Oct 28 → 2018 Oct 31
|Name||IEEE Region 10 Annual International Conference, Proceedings/TENCON|
|Conference||2018 IEEE Region 10 Conference, TENCON 2018|
|Country||Korea, Republic of|
|Period||18/10/28 → 18/10/31|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This research was supported by the MOTIE(Ministry of Trade, Industry & Energy) (10080722) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.
© 2018 IEEE.
All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering