A Low-Voltage Charge Pump with High Pumping Efficiency

Taegun Yim; Seungjin Lee; Choongkeun Lee; Hongil Yoon

doi:10.1109/TENCON.2018.8650247

A Low-Voltage Charge Pump with High Pumping Efficiency

Taegun Yim, Seungjin Lee, Choongkeun Lee, Hongil Yoon

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

A low voltage charge pump with high pumping efficiency is proposed in this paper. To get high pumping efficiency, the proposed circuit uses 2 branches cross coupled structure. To eliminate the body effect and threshold voltage drops, PMOS transistors are used as Charge Transfer Switch (CTS). The inverters below and above the CTS PMOS for controlling the gate of CTS PMOS properly. Undesired charge transfer flows higher voltage node voltage to lower voltage node is removed as the NMOS transistor and PMOS transistor below and above the CTS PMOS turn off during the clock transition. Furthermore, the time when those NMOS transistor and PMOS transistor are both off is short and due to the cross coupled wiring, the fast gate control would be able to made by present and previous stage. So that the cross coupled CTS charge pump has higher pumping efficiency than conventional circuits. The simulation results show that the proposed circuit's performance is better than other circuits.

Original language	English
Title of host publication	Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2135-2139
Number of pages	5
ISBN (Electronic)	9781538654576
DOIs	https://doi.org/10.1109/TENCON.2018.8650247
Publication status	Published - 2019 Feb 22
Event	2018 IEEE Region 10 Conference, TENCON 2018 - Jeju, Korea, Republic of Duration: 2018 Oct 28 → 2018 Oct 31

Publication series

Name	IEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume	2018-October
ISSN (Print)	2159-3442
ISSN (Electronic)	2159-3450

Conference

Conference	2018 IEEE Region 10 Conference, TENCON 2018
Country/Territory	Korea, Republic of
City	Jeju
Period	18/10/28 → 18/10/31

Bibliographical note

Funding Information:
ACKNOWLEDGMENT This research was supported by the MOTIE(Ministry of Trade, Industry & Energy) (10080722) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device.

Publisher Copyright:
© 2018 IEEE.

All Science Journal Classification (ASJC) codes

Computer Science Applications
Electrical and Electronic Engineering

Access to Document

10.1109/TENCON.2018.8650247

Cite this

Yim, T., Lee, S., Lee, C., & Yoon, H. (2019). A Low-Voltage Charge Pump with High Pumping Efficiency. In Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference (pp. 2135-2139). [8650247] (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/TENCON.2018.8650247

@inproceedings{95b9026cda144ef58dd01dc81c1b63c4,

title = "A Low-Voltage Charge Pump with High Pumping Efficiency",

abstract = "A low voltage charge pump with high pumping efficiency is proposed in this paper. To get high pumping efficiency, the proposed circuit uses 2 branches cross coupled structure. To eliminate the body effect and threshold voltage drops, PMOS transistors are used as Charge Transfer Switch (CTS). The inverters below and above the CTS PMOS for controlling the gate of CTS PMOS properly. Undesired charge transfer flows higher voltage node voltage to lower voltage node is removed as the NMOS transistor and PMOS transistor below and above the CTS PMOS turn off during the clock transition. Furthermore, the time when those NMOS transistor and PMOS transistor are both off is short and due to the cross coupled wiring, the fast gate control would be able to made by present and previous stage. So that the cross coupled CTS charge pump has higher pumping efficiency than conventional circuits. The simulation results show that the proposed circuit's performance is better than other circuits.",

author = "Taegun Yim and Seungjin Lee and Choongkeun Lee and Hongil Yoon",

note = "Funding Information: ACKNOWLEDGMENT This research was supported by the MOTIE(Ministry of Trade, Industry & Energy) (10080722) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 IEEE Region 10 Conference, TENCON 2018 ; Conference date: 28-10-2018 Through 31-10-2018",

year = "2019",

month = feb,

day = "22",

doi = "10.1109/TENCON.2018.8650247",

language = "English",

series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "2135--2139",

booktitle = "Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference",

address = "United States",

}

Yim, T, Lee, S, Lee, C & Yoon, H 2019, A Low-Voltage Charge Pump with High Pumping Efficiency. in Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference., 8650247, IEEE Region 10 Annual International Conference, Proceedings/TENCON, vol. 2018-October, Institute of Electrical and Electronics Engineers Inc., pp. 2135-2139, 2018 IEEE Region 10 Conference, TENCON 2018, Jeju, Korea, Republic of, 18/10/28. https://doi.org/10.1109/TENCON.2018.8650247

A Low-Voltage Charge Pump with High Pumping Efficiency. / Yim, Taegun; Lee, Seungjin; Lee, Choongkeun et al.

Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference. Institute of Electrical and Electronics Engineers Inc., 2019. p. 2135-2139 8650247 (IEEE Region 10 Annual International Conference, Proceedings/TENCON; Vol. 2018-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - A Low-Voltage Charge Pump with High Pumping Efficiency

AU - Yim, Taegun

AU - Lee, Seungjin

AU - Lee, Choongkeun

AU - Yoon, Hongil

N1 - Funding Information: ACKNOWLEDGMENT This research was supported by the MOTIE(Ministry of Trade, Industry & Energy) (10080722) and KSRC(Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. Publisher Copyright: © 2018 IEEE.

PY - 2019/2/22

Y1 - 2019/2/22

N2 - A low voltage charge pump with high pumping efficiency is proposed in this paper. To get high pumping efficiency, the proposed circuit uses 2 branches cross coupled structure. To eliminate the body effect and threshold voltage drops, PMOS transistors are used as Charge Transfer Switch (CTS). The inverters below and above the CTS PMOS for controlling the gate of CTS PMOS properly. Undesired charge transfer flows higher voltage node voltage to lower voltage node is removed as the NMOS transistor and PMOS transistor below and above the CTS PMOS turn off during the clock transition. Furthermore, the time when those NMOS transistor and PMOS transistor are both off is short and due to the cross coupled wiring, the fast gate control would be able to made by present and previous stage. So that the cross coupled CTS charge pump has higher pumping efficiency than conventional circuits. The simulation results show that the proposed circuit's performance is better than other circuits.

AB - A low voltage charge pump with high pumping efficiency is proposed in this paper. To get high pumping efficiency, the proposed circuit uses 2 branches cross coupled structure. To eliminate the body effect and threshold voltage drops, PMOS transistors are used as Charge Transfer Switch (CTS). The inverters below and above the CTS PMOS for controlling the gate of CTS PMOS properly. Undesired charge transfer flows higher voltage node voltage to lower voltage node is removed as the NMOS transistor and PMOS transistor below and above the CTS PMOS turn off during the clock transition. Furthermore, the time when those NMOS transistor and PMOS transistor are both off is short and due to the cross coupled wiring, the fast gate control would be able to made by present and previous stage. So that the cross coupled CTS charge pump has higher pumping efficiency than conventional circuits. The simulation results show that the proposed circuit's performance is better than other circuits.

UR - http://www.scopus.com/inward/record.url?scp=85063232291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85063232291&partnerID=8YFLogxK

U2 - 10.1109/TENCON.2018.8650247

DO - 10.1109/TENCON.2018.8650247

M3 - Conference contribution

AN - SCOPUS:85063232291

T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON

SP - 2135

EP - 2139

BT - Proceedings of TENCON 2018 - 2018 IEEE Region 10 Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE Region 10 Conference, TENCON 2018

Y2 - 28 October 2018 through 31 October 2018

ER -

A Low-Voltage Charge Pump with High Pumping Efficiency

Abstract

Publication series

Conference

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this