A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

D. H. Kim, J. Y. Kim, M. Huh, Y. S. Hwang, J. M. Park, D. H. Han, D. I. Kim, Mann-Ho Cho, B. H. Lee, H. K. Hwang, J. W. Song, N. J. Kang, G. W. Ha, S. S. Song, M. S. Shim, S. E. Kim, J. M. Kwon, B. J. Park, H. J. Oh, H. J. Kim & 18 others D. S. Woo, M. Y. Jeong, Y. I. Kim, Y. S. Lee, H. J. Kim, J. C. Shin, J. W. Seo, S. S. Jeong, K. H. Yoon, T. H. Ahn, J. B. Lee, Y. W. Hyung, S. J. Park, H. S. Kim, W. T. Choi, G. Y. Jin, Y. G. Park, Kinam Kim

Research output: Contribution to journalConference article

15 Citations (Scopus)

Abstract

Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

Original languageEnglish
Pages (from-to)69-72
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Publication statusPublished - 2004 Dec 1
EventIEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States
Duration: 2004 Dec 132004 Dec 15

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Dynamic random access storage
Management information systems
capacitors
Capacitors
MIS (semiconductors)
Oxides
Aspect ratio
Capacitance
high aspect ratio
cells
mesh
capacitance
oxides
silicon nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Kim, D. H. ; Kim, J. Y. ; Huh, M. ; Hwang, Y. S. ; Park, J. M. ; Han, D. H. ; Kim, D. I. ; Cho, Mann-Ho ; Lee, B. H. ; Hwang, H. K. ; Song, J. W. ; Kang, N. J. ; Ha, G. W. ; Song, S. S. ; Shim, M. S. ; Kim, S. E. ; Kwon, J. M. ; Park, B. J. ; Oh, H. J. ; Kim, H. J. ; Woo, D. S. ; Jeong, M. Y. ; Kim, Y. I. ; Lee, Y. S. ; Kim, H. J. ; Shin, J. C. ; Seo, J. W. ; Jeong, S. S. ; Yoon, K. H. ; Ahn, T. H. ; Lee, J. B. ; Hyung, Y. W. ; Park, S. J. ; Kim, H. S. ; Choi, W. T. ; Jin, G. Y. ; Park, Y. G. ; Kim, Kinam. / A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs. In: Technical Digest - International Electron Devices Meeting, IEDM. 2004 ; pp. 69-72.
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abstract = "Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.",
author = "Kim, {D. H.} and Kim, {J. Y.} and M. Huh and Hwang, {Y. S.} and Park, {J. M.} and Han, {D. H.} and Kim, {D. I.} and Mann-Ho Cho and Lee, {B. H.} and Hwang, {H. K.} and Song, {J. W.} and Kang, {N. J.} and Ha, {G. W.} and Song, {S. S.} and Shim, {M. S.} and Kim, {S. E.} and Kwon, {J. M.} and Park, {B. J.} and Oh, {H. J.} and Kim, {H. J.} and Woo, {D. S.} and Jeong, {M. Y.} and Kim, {Y. I.} and Lee, {Y. S.} and Kim, {H. J.} and Shin, {J. C.} and Seo, {J. W.} and Jeong, {S. S.} and Yoon, {K. H.} and Ahn, {T. H.} and Lee, {J. B.} and Hyung, {Y. W.} and Park, {S. J.} and Kim, {H. S.} and Choi, {W. T.} and Jin, {G. Y.} and Park, {Y. G.} and Kinam Kim",
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Kim, DH, Kim, JY, Huh, M, Hwang, YS, Park, JM, Han, DH, Kim, DI, Cho, M-H, Lee, BH, Hwang, HK, Song, JW, Kang, NJ, Ha, GW, Song, SS, Shim, MS, Kim, SE, Kwon, JM, Park, BJ, Oh, HJ, Kim, HJ, Woo, DS, Jeong, MY, Kim, YI, Lee, YS, Kim, HJ, Shin, JC, Seo, JW, Jeong, SS, Yoon, KH, Ahn, TH, Lee, JB, Hyung, YW, Park, SJ, Kim, HS, Choi, WT, Jin, GY, Park, YG & Kim, K 2004, 'A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs', Technical Digest - International Electron Devices Meeting, IEDM, pp. 69-72.

A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs. / Kim, D. H.; Kim, J. Y.; Huh, M.; Hwang, Y. S.; Park, J. M.; Han, D. H.; Kim, D. I.; Cho, Mann-Ho; Lee, B. H.; Hwang, H. K.; Song, J. W.; Kang, N. J.; Ha, G. W.; Song, S. S.; Shim, M. S.; Kim, S. E.; Kwon, J. M.; Park, B. J.; Oh, H. J.; Kim, H. J.; Woo, D. S.; Jeong, M. Y.; Kim, Y. I.; Lee, Y. S.; Kim, H. J.; Shin, J. C.; Seo, J. W.; Jeong, S. S.; Yoon, K. H.; Ahn, T. H.; Lee, J. B.; Hyung, Y. W.; Park, S. J.; Kim, H. S.; Choi, W. T.; Jin, G. Y.; Park, Y. G.; Kim, Kinam.

In: Technical Digest - International Electron Devices Meeting, IEDM, 01.12.2004, p. 69-72.

Research output: Contribution to journalConference article

TY - JOUR

T1 - A Mechanically Enhanced Storage node for virtually unlimited Height (MESH) capacitor aiming at sub 70nm DRAMs

AU - Kim, D. H.

AU - Kim, J. Y.

AU - Huh, M.

AU - Hwang, Y. S.

AU - Park, J. M.

AU - Han, D. H.

AU - Kim, D. I.

AU - Cho, Mann-Ho

AU - Lee, B. H.

AU - Hwang, H. K.

AU - Song, J. W.

AU - Kang, N. J.

AU - Ha, G. W.

AU - Song, S. S.

AU - Shim, M. S.

AU - Kim, S. E.

AU - Kwon, J. M.

AU - Park, B. J.

AU - Oh, H. J.

AU - Kim, H. J.

AU - Woo, D. S.

AU - Jeong, M. Y.

AU - Kim, Y. I.

AU - Lee, Y. S.

AU - Kim, H. J.

AU - Shin, J. C.

AU - Seo, J. W.

AU - Jeong, S. S.

AU - Yoon, K. H.

AU - Ahn, T. H.

AU - Lee, J. B.

AU - Hyung, Y. W.

AU - Park, S. J.

AU - Kim, H. S.

AU - Choi, W. T.

AU - Jin, G. Y.

AU - Park, Y. G.

AU - Kim, Kinam

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

AB - Fully reliable lean-free stacked capacitor, with the meshes of the supporter made of Si3N4, has been successfully developed on 80nm COB DRAM application. This novel process terminates persistent problems caused by mechanical instability of storage node with high aspect ratio. With Mechanically Enhanced Storage node for virtually unlimited Height (MESH), the cell capacitance over 30fF/cell has been obtained by using conventional MIS dielectric with an equivalent 2.3nm oxide thickness. This inherently lean-free capacitor makes it possible extending the existing MIS dielectric technology to sub-70nm OCS (one cylindrical storage node) DRAMs.

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M3 - Conference article

SP - 69

EP - 72

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

SN - 0163-1918

ER -